Semiconductor device
A semiconductor device of the present invention includes a semiconductor substrate; a diffusion layer formed about a surface of the semiconductor substrate; a first conductive layer formed on the semiconductor substrate, and an insulating layer formed on the semiconductor substrate after the first conductive layer and the diffusion layer are formed, and a second conductive layer formed on the insulating layer, and a first contact formed in the insulating layer, connecting the first conductive layer to the second conductive layer, and a second contact formed in the insulating layer, connecting the first conductive layer to the diffusion layer. In addition, a part of the diffusion layer extends to a lower portion of the first contact.
1 . A semiconductor device, comprising:
a semiconductor substrate;
a diffusion layer formed about a surface of the semiconductor substrate;
a first conductive layer formed on the semiconductor substrate;
an insulating layer formed on the semiconductor substrate after the first conductive layer and the diffusion layer are formed;
a second conductive layer formed on the insulating layer;
a first contact formed in the insulating layer, connecting the first conductive layer and the second conductive layer, and
a second contact formed in the insulating layer, connecting the first conductive layer and the diffusion layer; wherein
a part of the diffusion layer extends to a lower portion of the first contact.
2 . The semiconductor device according to claim 1 , further comprising:
a cell region including a predetermined function, and
an device isolating region formed about a surface of the semiconductor substrate; wherein
the device isolating region insulates the diffusion layer from the cell region; and
the first conductive layer extends from the cell region across the device isolating region.
3 . The semiconductor device according to claim 1 , wherein
the diffusion layer has a conduction type differing from a conduction type of the semiconductor substrate.
4 . A semiconductor device, comprising:
a semiconductor substrate;
a diffusion layer formed about a surface of the semiconductor substrate;
a first conductive layer formed on the semiconductor substrate;
an insulating layer formed on the semiconductor substrate after the first conductive layer and the diffusion layer are formed;
a second conductive layer formed on the insulating layer; and
a contact formed in the insulating layer, connecting the first conductive layer to the second conductive layer and also connecting the second conductive layer to the diffusion layer.
5 . The semiconductor device according to claim 3 , wherein
a part of the diffusion layer extends to a lower portion of the contact.
6 . The semiconductor device according to claim 4 , further comprising:
a cell region including a predetermined function, and
an device isolating region formed about a surface of the semiconductor substrate; wherein
the device isolating region insulates the diffusion layer from the cell region, and
the first conductive layer extends from the cell region across the device isolating region.
7 . The semiconductor device according to claim 4 , wherein
a diameter of the contact is 5/3 or more of the width of the first conductive layer.
8 . The semiconductor device according to claim 4 , wherein
the diffusion layer has a conduction type differing from a conduction type of the semiconductor substrate.