Semiconductor device comprising capacitor and method of fabricating the same
View Patent ↗A semiconductor device, having a memory cell region and a peripheral circuit region, includes an insulating film, having an upper surface, formed on a major surface of a semiconductor substrate to extend from the memory cell region to the peripheral circuit region. A capacitor lower electrode assembly is formed in the memory cell region to upwardly extend to substantially the same height as the upper surface of the insulating film on the major surface of the semiconductor substrate. Additionally, the lower electrode assembly includes first and second lower electrodes that are adjacent through the insulating film. A capacitor upper electrode is formed on the capacitor lower electrode through a dielectric film, to extend onto the upper surface of the insulating film. The capacitor lower electrode includes a capacitor lower electrode part having a top surface and a bottom surface. A semiconductor device organized as just described, permits implementation having a high density of integration while ensuring the capacitor exhibits high reliability and a constant capacitance.
1. A method of fabricating a semiconductor device, the method comprising steps of:
forming a lower insulating film over a major surface of a semiconductor substrate,
forming an upper insulating film over said lower insulating film,
forming an opening through said upper insulating film and said lower insulating film,
increasing a width of said opening at said lower insulating film by etching away a part of said lower insulating film exposed at said opening,
forming a first conductor film along an inner side surface of said opening, and
forming a second conductor film on said first conductor film with a dielectric film there between
wherein said step of forming a first conductor film includes the step of forming said first conductor film so as to extend from an inner side surface of said opening to above an upper surface of said upper insulating film,
further comprising the step of forming granular crystals on said first conductor film, the step of removing said first conductor film and said granular crystals located over the upper surface of said upper insulating film, and the step of removing said upper insulating film carried out after said step of forming a first conductor film and before said step of forming a second conductor film.
2. The method of fabricating a semiconductor device according to claim 1 , further comprising: removing said lower insulating film, after said step of removing said upper insulating film and before the step of forming said second conductor film.