Semiconductor light-emitting device

1. A semiconductor light-emitting device, comprising:

a semiconductor light-emitting element;

a phosphor layer that is formed so as to cover at least a part of the semiconductor light-emitting element; and

an outer layer that is formed so as to cover at least a part of the phosphor layer;

wherein the phosphor layer comprises a binder and a phosphor that is dispersed in the binder,

the outer layer comprises a porous material,

the binder comprises a binder material and an inorganic particle,

the inorganic particle has an effective particle diameter equal to or smaller than a quarter of a wavelength of light emitted from the semiconductor light-emitting element, and

the inorganic particle has a higher refractive index than the binder material.

2. The semiconductor light-emitting device according to claim 1 , wherein light emitted from the semiconductor light-emitting element has a maximum peak wavelength of equal to or shorter than 490 nm.

3. The semiconductor light-emitting device according to claim 1 , wherein the refractive index of the binder is lower than that of a material forming a principal surface on a light extraction side in the semiconductor light-emitting element and higher than that of the outer layer.

4. The semiconductor light-emitting device according to claim 1 , wherein the porous material is formed of an inorganic material.

5. The semiconductor light-emitting device according to claim 4 , wherein the porous material is an aggregated porous body of particles formed of the inorganic material.

6. The semiconductor light-emitting device according to claim 1 , wherein the porous material is an aggregated porous body of particles formed of an inorganic material,

the particles have a mean particle diameter equal to or smaller than a quarter of a wavelength of light passing through the outer layer, and

the aggregated porous body has a mean pore diameter of equal to or smaller than the quarter of the wavelength of the light passing through the outer layer.

7. The semiconductor light-emitting device according to claim 1 , further comprising a light-transmitting layer that is interposed between the semiconductor light-emitting element and the phosphor layer.

8. The semiconductor light-emitting device according to claim 7 , wherein the refractive index of the light-transmitting layer is lower than that of a material forming a principal surface on a light extraction side in the semiconductor light-emitting element and higher than that of the binder in the phosphor layer.

9. The semiconductor light-emitting device according to claim 7 , wherein the light-transmitting layer comprises a base material and an inorganic particle that is dispersed in the base material, and

the inorganic particle has an effective particle diameter equal to or smaller than a quarter of a wavelength of light passing through the base material and a higher reflective index than the base material.

10. The semiconductor light-emitting device according to claim 1 , wherein the outer layer and the phosphor layer are made to adhere to each other by the binder.

11. The semiconductor light-emitting device according to claim 1 , wherein the outer layer further comprises a dispersion medium, and

the porous material is dispersed in the dispersion medium.

12. The semiconductor light-emitting device according to claim 1 , further comprising a case having a recessed portion in which the phosphor layer is filled,

wherein the outer layer is disposed so as to cover an opening of the recessed portion.

13. The semiconductor light-emitting device according to claim 12 , wherein the outer layer has a plate shape.