Nitride semiconductor light emitting element and nitride semiconductor light emitting device
View Patent ↗A nitride semiconductor device according to the present invention includes a n-GaN substrate 10 and a semiconductor multilayer structure arranged on the principal surface of the n-GaN substrate 10 and including a p-type region, an n-type region and an active layer between them. An SiO 2 layer 30 with an opening and a p-side electrode, which makes contact with a portion of the p-type region of the semiconductor multilayer structure, are arranged on the upper surface of the semiconductor multilayer structure. An n-side electrode 36 is arranged on the back surface of the substrate 10 . The p-side electrode includes a p-side contact electrode 32 that contacts with the portion of the p-type region and a p-side interconnect electrode 34 that covers the p-side contact electrode 2 and the SiO 2 layer 30 . Part of the p-side contact electrode 32 is exposed under the p-side interconnect electrode 34.
1. A nitride semiconductor light-emitting element comprising:
a nitride-based semiconductor substrate including an n-type dopant;
a semiconductor multilayer structure, which is arranged on the principal surface of the semiconductor substrate and which includes a p-type region, an n-type region and an active layer sandwiched between the p- and n-type regions;
an insulating film, which has been deposited on the upper surface of the semiconductor multilayer structure and which has an opening;
a multilayer p-side electrode, which is arranged over the upper surface of the semiconductor multilayer structure and which makes contact with a portion of the p-type region of the semiconductor multilayer structure at the opening of the insulating film; and
an n-side electrode, which is arranged on the back surface of the semiconductor substrate,
wherein the multilayer p-side electrode includes a first p-side contact electrode layer that contacts with the portion of the p-type region and a second p-side interconnect electrode layer that has been stacked on the first p-side contact electrode layer, and
wherein part of the first p-side contact electrode layer is exposed under the second p-side interconnect electrode layer.
2. The nitride semiconductor light-emitting element of claim 1 , wherein that part of the first p-side electrode layer that is exposed under the second p-side electrode layer is not located over the opening.
3. The nitride semiconductor light-emitting element of claim 1 , wherein multiple parts of the first p-side electrode layer are exposed under the second p-side electrode layer.
4. The nitride semiconductor light-emitting element of claim 1 , wherein the insulating film has a striped opening and multiple parts of the first p-side electrode layer are exposed under the second p-side electrode layer on two opposite sides of the opening of the insulating film.
5. The nitride semiconductor light-emitting element of claim 1 , wherein the uppermost layer of the first p-side electrode layer has different hue, saturation and/or lightness from that of the second p-side electrode layer.
6. The nitride semiconductor light-emitting element of claim 1 , wherein the respective uppermost layers of the first and second p-side electrode layers and the insulating film have mutually different reflectances.
7. A semiconductor light-emitting device comprising:
a heatsink; and
the semiconductor light-emitting element of one of claim 1 , which is arranged on the heatsink.
8. The semiconductor light-emitting device of claim 7 , wherein the semiconductor light-emitting element is mounted on the heatsink such that the back surface of its semiconductor substrate contacts with the heatsink.
9. A method for fabricating a nitride semiconductor light-emitting device, the method comprising the steps of:
providing the nitride semiconductor light-emitting element of claim 1 ; and
mounting the nitride semiconductor light-emitting element on a heatsink while sensing which part of the first p-side electrode layer is exposed under the second p-side electrode layer.
10. The method of claim 9 , wherein the step of mounting includes mounting the nitride semiconductor element on the heatsink such that the back surface of its semiconductor substrate contacts with the heatsink.