Electroacoustic component
View Patent ↗An electroacoustic component that includes a substrate made of monocrystalline LiNbO 3 is disclosed. In the component, a first Euler angle λ of the monocrystalline LiNbO 3 is: λ≈0°, a second Euler angle μ of the monocrystalline LiNbO 3 is: −74°≦μ≦−52° or 23°≦μ≦36°, and a third Euler angle θ of the monocrystalline LiNbO 3 is: θ≈0°.
1. An electroacoustic component configured to operate with guided bulk acoustic waves, comprising:
a substrate comprising monocrystalline LiNbO 3 ,
an additional substrate;
a metal layer on the substrate, the metal layer comprising electrodes for exciting an acoustic wave with a wavelength λ o ; and
an intermediate layer between the metal layer and the additional substrate; wherein:
the metal layer is between the substrate and the intermediate layer;
a first Euler angle λ of the monocrystalline LiNbO 3 is: λ≈0°,
a second Euler angle μ of the monocrystalline LiNbO 3 is: − 74 °≦μ≦−52°,
a third Euler angle θ of the monocrystalline LiNbO 3 is: θ≈0°; and
the thickness of the intermediate layer is between 20% and 200% relative to the wavelength λ 0 .
2. The component of claim 1 , wherein the component is configured such that a horizontally polarized shear wave can be excited in the component.
3. The component of claim 1 , wherein the metal layer comprises a W layer having a thickness relative to the wavelength of at most about 10%.
4. The component of claim 1 , wherein:
a propagation speed of the bulk acoustic wave in the substrate and in the additional substrate is greater than a propagation speed of the bulk acoustic wave in the intermediate layer.
5. The component of claim 4 , wherein the additional substrate comprises Si.
6. The component of claim 4 , wherein the substrate and the additional substrate each has a thickness of at least 10λ 0 .
7. The component of claim 1 , wherein the component is configured to operate with guided bulk acoustic waves, and the component further comprises:
a cover layer; and
an intermediate layer, wherein:
the metal layer is between the substrate and the intermediate layer,
the intermediate layer is between the metal layer and the cover layer, and
a propagation speed of the bulk acoustic wave in the substrate and the cover layer is greater than a propagation speed of the bulk acoustic wave in the intermediate layer.
8. The component of claim 1 , wherein the intermediate layer comprises SiO x with 1.6≦x≦2.1.
9. The component of claim 8 , wherein the intermediate layer comprises SiO x with 1.95≦x≦2.05.
10. The component of claim 1 , wherein for the second Euler angle μ: −67°≦μ−61°.
11. An electroacoustic component configured to operate with guided bulk acoustic waves, comprising:
a substrate comprising monocrystalline LiNbO 3 ,
an additional substrate;
a metal layer on the substrate, the metal layer comprising electrodes for exciting an acoustic wave with a wavelength λ o ; and
an intermediate layer;
wherein:
the metal layer is between the substrate and the intermediate layer;
the intermediate layer is between the metal layer and the additional substrate;
a first Euler angle λ of the monocrystalline LiNbO 3 is: λ≈0°,
a second Euler angle μ of the monocrystalline LiNbO 3 is: 23°≦μ36°, and
a third Euler angle θ of the monocrystalline LiNbO 3 is: θ≈0°; and
the thickness of the intermediate layer is between 20% and 200% relative to the wavelength λ 0 .
12. The component of claim 11 , wherein the component is configured such that a Rayleigh wave can be excited in the component.
13. The component of claim 11 , wherein for the second Euler angle μ: 28°≦μ32°.
14. The component of claim 11 , wherein the metal layer comprises a W layer, wherein a thickness of the W layer relative to the wavelength is at most about 10%.
15. The component of claim 11 , wherein
a propagation speed of the bulk acoustic wave in the substrate and in the additional substrate is greater than a propagation speed of the bulk acoustic wave in the intermediate layer.
16. The component of claim 15 , wherein the intermediate layer comprises SiO x with 1.6≦x≦2.1.
17. The component of claim 16 , wherein the intermediate layer comprises SiO x with 1.95≦x≦2.05.
18. The component of claim 15 , wherein the additional substrate comprises Si.
19. The component of claim 15 , wherein the substrate and the additional substrate each has a thickness of at least 10λ 0 .
20. The component of claim 11 , wherein the component is configured to operate with guided bulk acoustic waves, and the component further comprises:
a cover layer; and
an intermediate layer, wherein:
the metal layer is between the substrate and the intermediate layer,
the intermediate layer is between the metal layer and the cover layer, and
a propagation speed of the bulk acoustic wave in the substrate and the cover layer is greater than a propagation speed of the bulk acoustic wave in the intermediate layer.