Temperature sensor
View Patent ↗This invention is to provide a temperature sensor which can measure a precise temperature of a minute region, which can measure a temperature in a wide range from a low temperature to a high temperature, and which has a simple structure. The temperature sensor comprises a two-dimensional electron gas. A resistance of the two-dimensional electron gas is used to measure a temperature. The two-dimensional electron gas may have a heterostructure selected from the group consisting of an AlGaN/GaN system, an AlGaAs/GaAs system, an InAs/GaAs system, an InAs/GaSb/AlSb system, a SiGe/Si system, a SiC/Si system, a CdTe/HgTe/CdTe system, an InGaAs/InAlAs/InP system, and nanocrystalline silicon.
1. A temperature sensor comprising a two-dimensional electron gas, wherein a resistance of said two-dimensional electron gas is used to measure a temperature, and wherein the temperature sensor is subjected to optical excitation.
2. The temperature sensor according to claim 1 , further comprising a protective film formed on a contact region of said temperature sensor.
3. The temperature sensor according to claim 2 , wherein the protective film comprises silicon nitride (SiN).
4. The temperature sensor according to claim 1 , wherein said two-dimensional electron gas has a heterostructure selected from the group consisting of an AlGaN/GaN system, an AlGaAs/GaAs system, an InAs/GaAs system, an InAs/GaSb/AlSb system, a SiGe/Si system, a SiC/Si system, a CdTe/HgTe/CdTe system, an InGaAs/InAlAs/InP system, and nanocrystalline silicon.
5. The temperature sensor according to claim 1 , wherein said two-dimensional electron gas has a heterostructure of an AlGaN/GaN system, said temperature sensor further comprising a thin barrier layer provided between a supply layer and a smaller band gap layer than said supply layer of said heterostructure.
6. The temperature sensor according to claim 5 , wherein the thin barrier layer comprises aluminum nitride (AIN), and wherein the thin barrier layer has a thickness of between approximately 1 nanometer (nm) and approximately 2 nm.
7. The temperature sensor according to claim 1 , wherein said temperature sensor has a plurality of sensors disposed in a matrix form.
8. The temperature sensor according to claim 1 , wherein said temperature sensor further comprises a magnetic field transducer.
9. The temperature sensor according to claim 1 , wherein the temperature sensor is configured to detect temperatures between absolute zero and 600 degrees Celsius.
10. The temperature sensor according to claim 1 , further comprising:
a substrate; and
a first layer that is adjacent to the substrate.
11. The temperature sensor according to claim 10 , wherein the first layer is deposited onto the substrate by way of crystal growth.
12. The temperature sensor according to claim 10 , wherein the first layer comprises gallium nitride (GaN).
13. The temperature sensor according to claim 10 , further comprising a second layer adjacent to the first layer.
14. The temperature sensor according to claim 13 , wherein the second layer comprises aluminum gallium nitride (AlGaN).
15. The temperature sensor according to claim 14 , wherein the AlGaN comprises n-type AlGaN.
16. The temperature sensor according to claim 13 , wherein the second layer is deposited onto the first layer by way of crystal growth.
17. The temperature sensor according to claim 13 , wherein the two-dimensional electron gas is positioned at an interface between the first layer and the second layer.
18. The temperature sensor according to claim 1 , further comprising one or more ohmic contacts through which the resistance of the two-dimensional electron gas is measured.
19. The temperature sensor according to claim 1 , wherein the two-dimensional electron gas is positioned at a depth of approximately 30 nanometers (nm) from a surface of the temperature sensor.
20. The temperature sensor according to claim 1 , wherein the temperature sensor is incorporated into a probe tip of a scanning probe microscope.