Information recording medium, method and apparatus for manufacturing the same
View Patent ↗An information recording medium of the present invention includes recording layers 19 and 26 whose phase can change by an optical or an electrical system so as to be detectable, and interface layers 18, 20, 25 and 27 , which are in contact with the recording layers 19 and 26 , to serve as oxide layers. The recording layer 19 contains a Ge—Bi—Te-M material represented by a formula: Ge α Bi β Te γ M 100-α-β-γ (atom %), where M denotes at least one element selected from Al, Ga, In and Mn, and α, β and γ satisfy 25≦α≦60, 0<β≦18, 35≦γ≦55, and 82≦α+β+γ<100. The interface layers 18, 20, 25 and 27 contain at least one oxide of the element M contained in the recording layers 19 and 26.
1. An information recording medium, comprising:
a recording layer whose phase can change by an optical or an electrical system so as to be detectable, and
an oxide layer that is in contact with the recording layer, wherein:
the recording layer contains a Ge—Bi—Te-M material represented by the following formula:
Ge α Bi β Te γ M 100-α-β-γ (atom %),
where M denotes at least one element selected from Al, Ga, In and Mn, and α, β and γ satisfy 25≦α≦60, 0<β≦18, 35≦γ≦55, and 82≦α+β+γ<100, and
the oxide layer contains at least one oxide of the element M contained in the recording layer.
2. The information recording medium according to claim 1 , wherein the content of the oxide of the element M in the oxide layer exceeds 10 mol %.
3. The information recording medium according to claim 2 , wherein the content of the oxide of the element M in the oxide layer is 20 mol % or higher and 80 mol % or lower.
4. The information recording medium according to claim 3 , wherein the content of the oxide of the element M in the oxide layer is 30 mol % or higher and 70 mol % or lower.
5. The information recording medium according to claim 1 , wherein the oxide layer further contains at least one selected from Zr oxide, Si oxide, Cr oxide, Hf oxide, and Y oxide.
6. The information recording medium according to claim 1 , comprising a plurality of information layers, wherein at least one of the plurality of information layers includes the recording layer and the oxide layer.
7. The information recording medium according to claim 1 , wherein:
at least a dielectric layer, the recording layer, and a reflective layer are provided in this order from the laser beam incident side, and
the oxide layer is provided between the dielectric layer and the recording layer or between the recording layer and the reflective layer, or both between the dielectric layer and the recording layer and between the recording layer and the reflective layer.
8. A method for manufacturing an information recording medium including a recording layer whose phase can change by an optical or an electrical system so as to be detectable, and an oxide layer that is in contact with the recording layer, the method comprising:
(i) forming the recording layer containing a Ge—Bi—Te-M material represented by the following formula:
Ge α Bi β Te γ M 100-α-β-γ (atom %),
where α, β and γ satisfy 25≦α≦60, 0 <β≦18, 35≦γ≦55, and 82≦α+β+γ<100, by a sputtering method using a first sputtering target containing Ge, Bi, Te, and element M, where M denotes at least one element selected from Al, Ga, In, and Mn, and
(ii) forming the oxide layer containing at least one oxide of the element M contained in the recording layer by a sputtering method using a second sputtering target containing at least either one selected from the element M and an oxide of the element M.
9. An apparatus for manufacturing an information recording medium to be used for the manufacturing method described in claim 8 , the apparatus being provided with a sputtering device that includes an electrode, the first sputtering target or the second puttering target, and a substrate holder placed facing the first sputtering target or the second sputtering target.