SOLAR CELL PASSIVATION AND LEVELING
A device and a system to fabricate a device including a semiconductor mesa extending from a semiconductor base, the semiconductor mesa comprising an optically-active semiconductor area and a top surface, conductive material disposed on the top surface of the mesa, and substantially optically-transparent material disposed on the conductive material and on the top surface, wherein a surface of the substantially optically-transparent material above the conductive material and the top surface is substantially planar. In some aspects, the semiconductor mesa includes a side wall with one or more exposed p-n junctions, and material is disposed on the side wall to cover the one or more exposed p-n junctions.
1 . A method comprising:
fabricating a semiconductor base and a semiconductor mesa extending from the semiconductor base, the semiconductor mesa comprising an optically-active semiconductor area and a top surface;
depositing conductive material on the top surface of the mesa; and
depositing substantially optically-transparent material on the conductive material and on the top surface,
wherein a surface of the deposited substantially optically-transparent material above the conductive material and the top surface is substantially planar.
2 . A method according to claim 1 , further comprising:
depositing an anti-reflective coating on the top surface before depositing the substantially optically-transparent material.
3 . A method according to claim 2 , wherein the semiconductor mesa comprises a side wall including one or more exposed p-n junctions, and further comprising:
depositing material on the side wall to cover the one or more exposed p-n junctions.
4 . A method according to claim 3 , wherein depositing the material on the side wall comprises:
depositing the material continuously around a perimeter of the semiconductor mesa.
5 . A method according to claim 1 , wherein the substantially optically-transparent material comprises an anti-reflective material.
6 . A method according to claim 1 , further comprising:
depositing a substantially optically-transparent gel on the substantially planar surface,
wherein a refractive index of the substantially optically-transparent gel is substantially similar to a refractive index of the substantially optically-transparent material.
7 . A method according to claim 1 , further comprising:
placing a mold piece on substantially planar surface; and
forming mold compound around the mold piece and the semiconductor mesa,
wherein the formed mold compound defines an opening above the optically-active semiconductor area.
8 . A method according to claim 1 , wherein the semiconductor mesa comprises a side wall including one or more exposed p-n junctions, and
wherein depositing the substantially optically-transparent material comprises depositing the substantially optically-transparent material on the side wall to cover the one or more exposed p-n junctions.
9 . A method according to claim 8 , wherein depositing the substantially optically-transparent material comprises depositing the substantially optically-transparent material continuously around a perimeter of the semiconductor mesa.
10 . A device comprising:
a semiconductor mesa extending from a semiconductor base, the semiconductor mesa comprising an optically-active semiconductor area and a top surface;
conductive material disposed on the top surface of the mesa; and
substantially optically-transparent material disposed on the conductive material and on the top surface,
wherein a surface of the substantially optically-transparent material above the conductive material and the top surface is substantially planar.
11 . A device according to claim 10 , further comprising:
an anti-reflective coating disposed on the top surface of the mesa and under the substantially optically-transparent material.
12 . A device according to claim 11 , wherein the semiconductor mesa comprises a side wall including one or more exposed p-n junctions, and further comprising
material disposed on the side wall to cover the one or more exposed p-n junctions.
13 . A device according to claim 12 , wherein the material disposed on the side wall is continuous around a perimeter of the semiconductor mesa.
14 . A device according to claim 10 , wherein the substantially optically-transparent material comprises an anti-reflective material.
15 . A device according to claim 10 , further comprising:
a substantially optically-transparent gel disposed on the substantially planar surface.
16 . A device according to claim 15 , wherein a refractive index of the substantially optically-transparent gel is substantially similar to a refractive index of the substantially optically-transparent material.
17 . A device according to claim 10 , further comprising:
mold compound formed around the semiconductor mesa,
wherein the formed mold compound defines an opening above the optically-active semiconductor area.
18 . A device according to claim 10 , wherein the semiconductor mesa comprises a side wall including one or more exposed p-n junctions, and
wherein the substantially optically-transparent material is further disposed on the side wall to cover the one or more exposed p-n junctions.
19 . A device according to claim 18 , wherein the substantially optically-transparent material is continuous around a perimeter of the semiconductor mesa.