Electrical characteristics of electrochromic devices
View Patent ↗One exemplary embodiment of an electrochromic device comprises a tantalum-nitride ion-blocking layer formed between a transparent conductive layer and an electrochromic layer. Another exemplary embodiment of an electrochromic device comprises a tantalum-nitride ion-blocking layer formed between a transparent conductive layer and a counter electrode. Yet another exemplary embodiment of an electrochromic device comprises a type-2 ion-blocking layer formed on a transparent conductive layer as an ion diffusion barrier overlayer. Still another exemplary embodiment of an electrochromic device comprises a transparent conductive layer formed from tantalum nitride.
1. An electrochromic device, comprising a tantalum-nitride ion-blocking layer formed between a transparent conductive layer and an electrochromic layer.
2. The electrochromic device according to claim 1 , wherein tantalum-nitride ion-blocking layer has a thickness of between about 5 nm to about 50 nm.
3. The electrochromic device according to claim 2 , wherein tantalum-nitride ion-blocking layer has a thickness of between about 5 nm to about 15 nm.
4. The electrochromic device according to claim 2 , further comprising a type-2 ion-blocking layer formed on the transparent conductive layer on a side of the transparent electrically conductive layer that is remote from the electrochromic layer.
5. The electrochromic device according to claim 2 , wherein the transparent conductive layer comprises at least one of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum doped ZnO (AZO) and zinc indium tin oxide (ZITO).
6. The electrochromic device according to claim 1 , further comprising a second transparent conductive layer formed from tantalum nitride.
7. The electrochromic device according to claim 1 , further comprising a second tantalum-nitride ion-blocking layer formed between a second transparent conductive layer and a counter electrode.
8. The electrochromic device according to claim 7 , wherein the second tantalum-nitride ion-blocking layer has a thickness of between about 5 nm to about 50 nm.
9. The electrochromic device according to claim 8 , wherein the second tantalum-nitride ion-blocking layer has a thickness of between about 5 nm to about 15 nm.
10. The electrochromic device according to claim 8 , further comprising a type-2 ion-blocking layer formed on the second transparent conductive layer on a side of the second transparent electrically conductive layer that is remote from the counter electrode layer of the electrochromic device.
11. The electrochromic device according to claim 8 , wherein the second transparent conductive layer comprises at least one of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum doped ZnO (AZO) and zinc indium tin oxide (ZITO).
12. An electrochromic device, comprising a tantalum-nitride ion-blocking layer formed between a transparent conductive layer and a counter electrode layer.
13. The electrochromic device according to claim 12 , wherein tantalum-nitride ion-blocking layer has a thickness of between about 5 nm to about 50 nm.
14. The electrochromic device according to claim 13 , wherein tantalum-nitride ion-blocking layer has a thickness of between about 5 nm to about 15 nm.
15. The electrochromic device according to claim 13 , further comprising a type-2 ion-blocking layer formed on the transparent conductive layer on a side of the transparent electrically conductive layer that is remote from the counter electrode layer.
16. The electrochromic device according to claim 13 , wherein the transparent conductive layer comprises at least one of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum doped ZnO (AZO) and zinc indium tin oxide (ZITO).
17. The electrochromic device according to claim 12 , further comprising a second transparent conductive layer formed from tantalum nitride.
18. The electrochromic device according to claim 12 , further comprising a second tantalum-nitride ion-blocking layer formed between a second transparent conductive layer and an electrochromic layer.
19. The electrochromic device according to claim 18 , wherein the second tantalum-nitride ion-blocking layer has a thickness of between about 5 nm to about 50 nm.
20. The electrochromic device according to claim 19 , wherein the second tantalum-nitride ion-blocking layer has a thickness of between about 5 nm to about 15 nm.
21. The electrochromic device according to claim 19 , further comprising a type-2 ion-blocking layer formed on the second transparent conductive layer on a side of the second transparent electrically conductive layer that is remote from the electrochromic layer.
22. The electrochromic device according to claim 19 , wherein the transparent conductive layer comprises at least one of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum doped ZnO (AZO) and zinc indium tin oxide (ZITO).
23. An electrochromic device comprising a transparent conductive layer formed from-tantalum nitride.
24. The electrochromic device according to claim 23 , further comprising a second transparent conductive layer formed tantalum nitride.
25. The electrochromic device according to claim 23 , further comprising
a second transparent conductive layer; and
a tantalum-nitride ion-blocking layer formed between the second transparent conductive layer and an electrochromic layer.
26. The electrochromic device according to claim 25 , wherein tantalum-nitride ion-blocking layer has a thickness of between about 5 nm to about 50 nm.
27. The electrochromic device according to claim 25 , further comprising a type-2 ion-blocking layer formed on the second transparent conductive layer on a side of the second transparent electrically conductive layer that is remote from the electrochromic layer.
28. The electrochromic device according to claim 25 , wherein the second transparent conductive layer comprises at least one of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum doped ZnO (AZO) and zinc indium tin oxide (ZITO).
29. The electrochromic device according to claim 23 , further comprising
a second transparent conductive layer; and
a tantalum-nitride ion-blocking layer formed between the second transparent conductive layer and a counter electrode layer.
30. The electrochromic device according to claim 29 , wherein tantalum-nitride ion-blocking layer has a thickness of between about 5 nm to about 50 nm.
31. The electrochromic device according to claim 29 , further comprising a type-2 ion-blocking layer formed on the second transparent conductive layer on a side of the second transparent electrically conductive layer that is remote from the counter electrode layer.