REFERENCE VOLTAGE GENERATOR WITH BOOTSTRAPPING EFFECT
An integrated electronic device for generating a reference voltage. The circuitry has a bias current generator for generating a first bias current, a diode element coupled to the bias current generator and fed by a second bias current derived from the first bias current for converting the second bias current into a reference voltage across the diode element, a supply voltage pre-regulator stage for regulating the supply voltage used for the bias current generator, and an output buffer coupled to the reference voltage for providing a low impedance output, wherein the reference voltage is coupled to the supply pre-regulator stage for biasing the supply pre-regulator stage by the reference voltage.
1 . An integrated electronic device comprising circuitry for generating a reference voltage, the circuitry comprising:
a bias current generator for generating a first bias current,
a diode element coupled to the bias current generator and fed by a second bias current derived from the first bias current for converting the second bias current into a reference voltage across the diode element,
a supply voltage pre-regulator stage for regulating the supply voltage used for the bias current generator, and
an output buffer coupled to the reference voltage for providing a low impedance output, wherein
the reference voltage is coupled to the supply pre-regulator stage for biasing the supply pre-regulator stage by the reference voltage.
2 . The integrated electronic device according to claim 1 , wherein the supply voltage pre-regulator stage is fed by a third bias current derived from the first bias current.
3 . The integrated electronic device according to claim 2 , wherein the supply voltage pre-regulator stage is fed by a fourth bias current derived from the first bias current.
4 . The integrated electronic device according to claim 1 , wherein second, third and fourth bias currents are integer multiples of the first bias current.
5 . The integrated electronic device according to claim 1 , wherein the diode element is a series combination of at least one of an NMOS transistor, a PMOS transistor, a bipolar transistor, a diode and a resistor.
6 . A method for generating a reference voltage, comprising: providing a first bias current by a bias current source, providing the reference voltage by use of the first bias current, and using the reference voltage for pre-regulating the supply voltage XV of the bias current source.
7 . The method according to claim 6 , comprising using the first bias current for pre-regulating the supply voltage of the bias current source.
8 . The integrated electronic device according to claim 2 wherein second, third and fourth bias currents are integer multiples of the first bias current.
9 . The integrated electronic device according to claim 3 wherein second, third and fourth bias currents are integer multiples of the first bias current.
10 . The integrated electronic device according to claim 2 , wherein the diode element is a series combination of at least one of an NMOS transistor, a PMOS transistor, a bipolar transistor, a diode and a resistor.
11 . The integrated electronic device according to claim 3 , wherein the diode element is a series combination of at least one of an NMOS transistor, a PMOS transistor, a bipolar transistor, a diode and a resistor.
12 . The integrated electronic device according to claim 4 , wherein the diode element is a series combination of at least one of an NMOS transistor, a PMOS transistor, a bipolar transistor, a diode and a resistor.
13 . The integrated electronic device according to claim 2 , wherein the diode element is a parallel combination of at least one of an NMOS transistor, a PMOS transistor, a bipolar transistor, a diode and a resistor.
14 . The integrated electronic device according to claim 3 , wherein the diode element is a parallel combination of at least one of an NMOS transistor, a PMOS transistor, a bipolar transistor, a diode and a resistor.
15 . The integrated electronic device according to claim 4 , wherein the diode element is a parallel combination of at least one of an NMOS transistor, a PMOS transistor, a bipolar transistor, a diode and a resistor.