Front contact solar cell with formed electrically conducting layers on the front side and backside

1. A solar cell having a front side facing the sun to collect solar radiation during normal operation and a backside opposite the front side, the solar cell comprising:

a silicon substrate;

a first layer of doped polysilicon formed over a back surface of the substrate, the first layer of doped polysilicon forming a backside junction with the substrate;

a second layer of doped polysilicon formed over a front surface of the substrate, the second layer of doped polysilicon making an electrical connection to the substrate;

a first silicon dioxide layer between the first layer of doped polysilicon and the back surface of the substrate;

a second silicon dioxide layer between the second layer of doped polysilicon and the front surface of the substrate;

a first metal contact making an electrical connection to the first layer of doped polysilicon on the backside of the solar cell;

a second metal contact making an electrical connection to the second layer of doped polysilicon on the front side of the solar cell, the first metal contact and the second metal contact being configured to allow an external electrical circuit to be powered by the solar cell;

a doped region under a textured portion of the front surface of the substrate, the doped region being of a same conductivity type as the second layer of doped polysilicon; wherein the dielectric layer is not the first silicon dioxide layer or the second silicon dioxide layer, and

a dielectric layer formed over the first layer of doped polysilicon, and wherein the first metal contact comprises aluminum formed over the dielectric layer.

2. The solar cell of claim 1 further comprising an antireflective layer over the textured portion of the front surface of the substrate.

3. The solar cell of claim 2 wherein the antireflective layer comprises silicon nitride.

4. The solar cell of claim 1 wherein the substrate comprises an N-type silicon substrate, the first layer of doped polysilicon comprises a P-type doped polysilicon, and the second layer of doped polysilicon comprises an N-type doped polysilicon.

5. The solar cell of claim 1 wherein the first silicon dioxide layer is formed to a thickness between 10 and 50 Angstroms.

6. The solar cell of claim 1 further comprising a third metal contact formed over the first metal contact.

7. The solar cell of claim 1 wherein the first metal contact forms an infrared reflecting layer with the dielectric layer on the backside of the solar cell.

8. A solar cell having a front side facing the sun to collect solar radiation during normal operation and a backside opposite the front side, the solar cell comprising:

an N-type silicon substrate;

a textured surface on the N-type silicon substrate on the front side of the solar cell;

an antireflective layer over the textured surface of the N-type silicon substrate;

a P-type polysilicon layer forming a backside junction with the N-type silicon substrate;

an N-type polysilicon layer over the front side of the solar cell;

a first silicon dioxide layer between the N-type silicon substrate and the N-type polysilicon layer;

a second silicon dioxide layer between the p-type polysilicon and the back surface of the substrate;

a negative polarity metal contact making an electrical connection to the N-type polysilicon layer from the front side of the solar cell;

a positive polarity metal contact making an electrical connection to the P-type polysilicon layer from the backside of the solar cell;

an N-type doped region under the textured surface on the N-type silicon substrate on the front side of the solar cell; and

a dielectric layer formed over the P-type polysilicon layer, wherein the dielectric layer is not the first silicon dioxide layer or the second silicon dioxide layer, and wherein the positive polarity metal contact comprises aluminum formed over the dielectric layer.

9. The solar cell of claim 8 wherein the antireflective layer comprises a layer of silicon nitride.

10. The solar cell of claim 8 further comprising a dielectric capping layer over the N-type polysilicon layer.

11. The solar cell of claim 8 wherein the positive polarity metal contact forms an infrared reflecting layer with the dielectric layer formed over the P-type polysilicon layer.