Methods for fabricating thin film III-V compound solar cell
View Patent ↗The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.
1. A method for forming a thin film multiple junction III-V compound solar cell, the method comprising:
forming a first thin film III-V compound solar cell on a first substrate,
forming a second thin film III-V compound solar cell on a second substrate,
lifting by epitaxial lift off one of the first thin film III-V compound solar cell from the first substrate or the second thin film III-V compound solar cell from the second substrate,
wafer bonding the first and the second thin film III-V compound solar cell to form a wafer bonded thin film multiple junction III-V compound solar cell, wherein the wafer bonding includes direct wafer to wafer contact, and
lifting by epitaxial lift off the wafer bonded thin film III-V compound solar cell from the remaining substrate.
2. The method of claim 1 further comprising, forming a backing layer on a surface of the wafer bonded thin film multiple junction III-V compound solar cell.
3. The method of claim 2 , wherein the backing layer is formed on the surface of the wafer bonded thin film multiple junction III-V compound solar cell having the lowest bandgap energy level.
4. The method of claim 1 further comprising, metallizing a surface of the wafer bonded thin film multiple junction III-V compound solar cell to form one or more metallized conductive paths.
5. The method of claim 4 , wherein the surface of the wafer bonded thin film multiple junction III-V compound solar cell having the highest bandgap energy is metallized with a grid of metallized conductors.
6. The method of claim 1 further comprising, forming an antireflection coating a surface of the wafer bonded thin film multiple junction III-V compound solar cell.
7. The method of claim 6 , wherein the antireflection coating is formed on the surface of the junction having the highest bandgap energy in the wafer bonded thin film multiple junction III-V compound solar.
8. A method for forming a thin film multiple junction III-V compound solar cell, the method comprising:
forming a first thin film III-V compound solar cell on a first substrate having at least one active layer,
forming a second thin film III-V compound solar cell on a second substrate having at least one active layer,
wafer bonding the first and the second thin film III-V compound solar cell to form a wafer bonded thin film multiple junction III-V compound solar cell, wherein the wafer bonding includes direct wafer to wafer contact,
removing a sacrificial layer from between the wafer bonded thin film multiple junction III-V compound solar cell and either the first substrate or the second substrate, and
lifting by epitaxial lift off the wafer bonded thin film III-V compound solar cell from the remaining substrate.