High-frequency shear-horizontal surface acoustic wave sensor
View Patent ↗A Love wave sensor uses a single-phase unidirectional interdigital transducer (IDT) on a piezoelectric substrate for leaky surface acoustic wave generation. The IDT design minimizes propagation losses, bulk wave interferences, provides a highly linear phase response, and eliminates the need for impedance matching. As an example, a high frequency (˜300-400 MHz) surface acoustic wave (SAW) transducer enables efficient excitation of shear-horizontal waves on 36° Y-cut lithium tantalate (LTO) giving a highly linear phase response (2.8° P-P). The sensor has the ability to detect at the pg/mm 2 level and can perform multi-analyte detection in real-time. The sensor can be used for rapid autonomous detection of pathogenic microorganisms and bioagents by field deployable platforms.
1. A shear-horizontal surface acoustic wave sensor, comprising:
a piezoelectric substrate,
a unidirectional transmitting interdigital transduce on the substrate that primarily excites shear-horizontal waves on the substrate,
a guiding layer on the substrate that has a lower shear velocity than the substrate for confinement of the shear-horizontal wave therein as a guided Love wave,
a sensing region on the guiding layer, and
a unidirectional receiving interdigital transducer that detects the guided Love wave that is transmitted through the sensing region,
wherein the unidirectional transmitting and receiving transducers each comprise an electrode-width-controlled single-phase unidirectional transducer (EWC-SPUDT) comprising at least one EWC-SPUDT cell, each EWC-SPUDT cell comprising a λ/8 excitation electrode finger and λ/8 and λ/4 reflection electrode fingers, and wherein the finger spacings are optimized to excite or detect shear-horizontal waves that are in-phase along the length of each transducer in the presence of the guiding layer and the sensing region.
2. The sensor of claim 1 , wherein the unidirectional transmitting and receiving interdigital transducers are configured in a delay-line configuration.
3. The sensor of claim 1 , wherein the frequency of the guided Love wave is greater than 100 MHz.
4. The sensor of claim 3 , wherein the frequency of the guided Love wave is greater than 300 MHz.
5. The sensor of claim 1 , wherein the piezoelectric substrate 36° YX lithium tantalate.
6. The sensor of claim 1 , wherein the piezoelectric substrate comprises 36° Y quartz, langasite, langatate, langanite, lead zirconate titanate, cadmium sulfide, berlinite, lithium iodate, lithium tetraborate, or bismuth germanium oxide.
7. The sensor of claim 1 , wherein the substrate comprises a piezoelectric crystal layer, that is approximately thicker than the Love wave penetration depth, on a non-piezoelectric substrate.
8. The sensor of claim 1 , wherein the guiding layer comprises a polymer, SiO 2 , or ZnO.
9. The sensor of claim 1 , wherein the guiding layer comprises a biologically sensitive interface for capturing analytes from a fluid on the guiding layer in the sensing region.
10. The sensor of claim 1 , wherein the guiding layer comprises a chemically sensitive interface for sorbing analytes from a fluid on the guiding layer in the sensing region.
11. The sensor of claim 1 , further comprising a detector for measuring the phase response of the guided Love wave as a function of analyte added to the guiding layer in the sensing region.