Flip chip quantum well modulator
View Patent ↗A quantum well modulator configured to absorb or transmit light depending on an applied voltage is provided according to various embodiments. The quantum well modulator may include a substrate, a p-type and n-type semiconductor layers as well as a quantum well layer, each of which are deposited above the substrate. The substrate may be configured to filter light incident thereon, wherein the substrate does not include a reflective surface. The flip-chip quantum well modulator may be configured to substantially absorb light received through the substrate when a first voltage is applied. The flip-chip quantum well modulator may be configured to substantially transmit light received through the substrate when a second voltage is applied.
1. A flip-chip quantum well modulator configured to absorb or transmit light depending on an applied voltage, the quantum well modulator comprising:
a substrate configured to filter light incident thereon, wherein the substrate does not include a reflective surface, wherein the filtered light is within a specific wavelength band;
a p-type semiconductor layer deposited above the substrate;
a quantum well layer deposited above the substrate; and
an n-type semiconductor layer deposited above the substrate;
wherein the flip-chip quantum well modulator is configured to substantially absorb light received through the substrate when a first voltage is applied; and
wherein the flip-chip quantum well modulator is configured to substantially transmit light received through the substrate when a second voltage is applied.
2. The flip-chip quantum well modulator according to claim 1 , further comprising a plurality of solder balls communicatively coupled with the p-type semiconductor layer.
3. The flip-chip quantum well modulator according to claim 1 , further comprising a plurality of solder balls communicatively coupled with the n-type semiconductor layer.
4. The flip-chip quantum well modulator according to claim 1 , further comprising a plurality of conductive epoxy bumps communicatively coupled with the p-type semiconductor layer.
5. The flip-chip quantum well modulator according to claim 1 , further comprising a plurality of conductive epoxy bumps communicatively coupled with the n-type semiconductor layer.
6. The flip-chip quantum well modulator according to claim 1 , wherein the p-type semiconductor comprises a material selected from the group consisting of gallium arsenide, aluminum gallium arsenide, indium gallium arsenide, silicon, germanium, and lead sulfide.
7. The flip-chip quantum well modulator according to claim 1 , wherein the n-type semiconductor comprises a material selected from the group consisting of gallium arsenide, aluminum gallium arsenide, indium gallium arsenide, silicon, germanium, and lead sulfide.
8. The flip-chip quantum well modulator according to claim 1 , wherein the substrate comprises silicon.
9. The flip-chip quantum well modulator according to claim 1 , wherein the substrate comprises indium phosphide.
10. The flip-chip quantum well modulator according to claim 1 , wherein the specific wavelength band comprises 1530 nm to 1560 nm.
11. The flip-chip quantum well modulator according to claim 1 , wherein the substrate filters visible sunlight.
12. The flip-chip quantum well modulator according to claim 1 , wherein the substrate filters light such that infrared light is allowed to pass through the substrate.
13. A flip-chip quantum well modulator configured to absorb or transmit light depending on an applied voltage, the flip-chip quantum well modulator comprising:
a substrate configured to filter light incident thereon, wherein the substrate does not include a reflective surface, wherein the filtered light is within a specific wavelength band;
a p-type semiconductor layer deposited above the substrate;
a quantum well layer deposited above the substrate; and
an n-type semiconductor layer deposited above the substrate;
wherein the flip-chip quantum well modulator is configured to substantially absorb light received through the substrate when a first voltage is applied; and
wherein the flip-chip quantum well modulator is configured to substantially transmit light received through the substrate when a second voltage is applied.
14. The flip-chip quantum well modulator according to claim 13 , further comprising a plurality of interconnects coupled with the p-type semiconductor.
15. The flip-chip quantum well modulator according to claim 13 , further comprising a plurality of interconnects coupled with the n-type semiconductor.