Group of phosphor particles for light-emitting device, light-emitting device and backlight for liquid crystal display

1. A group of phosphor particles for a light-emitting device containing, in addition to divalent-europium-activated nitride red phosphor particles expressed in (MI 1-a Eu a )MIISiN 3 with a median diameter R1, at least one type of:

divalent-europium-activated oxynitride green phosphor particles of beta sialon expressed in Eu b Si c Al d O e N f with a median diameter G1;

divalent-europium-activated oxynitride yellow phosphor particles of alpha sialon expressed in MII g Eu h Si i Al j O k N l with a median diameter Y1; and

trivalent-cerium-activated silicate green phosphor particles expressed in MIV 3 (MV 1-m Ce m ) 2 (SiO 4 ) 3 with a median diameter G2, wherein

MI represents at least one element selected from Mg, Ca, Sr and Ba, MII represents at least one element selected from Al, Ga, In, Sc, Y, La, Gd and Lu, MIII represents at least one element selected from Li, Na, K, Rb, Cs, Mg, Ca, Sr and Ba, MIV represents at least one element selected from Mg, Ca, Sr and Ba, and MV represents at least one element selected from Al, Ga, In, Sc, Y, La, Gd and Lu,

conditions of 0.001≦a≦0.10; 0.005≦b≦0.4; c+d=12; e+f=16; 0<g≦3.0; 0.005≦h≦0.4; i+j=12; k+l=16; and 0.005≦m≦0.5 are satisfied, and

conditions of 1.3≦R1/G1≦4.0; 1.3≦R1/Y1≦4.0; and 1.3R1/G2≦4.0 are satisfied.

2. The group of phosphor particles for a light-emitting device according to claim 1 , wherein

MII represents at least one element selected from Al, Ga and In.

3. The group of phosphor particles for a light-emitting device according to claim 1 , wherein

MV represents at least one element selected from Ga, In, Sc and Y.

4. The group of phosphor particles for a light-emitting device according to claim 1 , wherein

said median diameter R1 is in a range of 7 μm≦R1≦19 μm.

5. A light-emitting device including:

a gallium nitride semiconductor light-emitting element capable of emitting primary light having a peak wavelength in a range of 430 nm to 480 nm and a luminescence converter for absorbing said primary light and emitting secondary light having a longer peak wavelength as compared with said primary light, wherein

said luminescence converter is formed with a single resin layer containing the group of phosphor particles of claim 1 and covers said semiconductor light-emitting element.

6. The light-emitting device according to claim 5 , wherein

the distribution density of said phosphor particles of a type having a relatively longer fluorescent peak wavelength and a relatively larger median diameter is increased at a position closer to said semiconductor light-emitting element as compared with a position farther from said semiconductor light-emitting element in said resin layer.

7. A backlight for a liquid crystal display, including the light-emitting device of claim 5 .