Solid-state imaging element
View Patent ↗A solid-state imaging element includes a photodiode formed in an upper portion of a semiconductor substrate to perform a photoelectric conversion, a silicon dioxide film formed on the substrate to cover the photodiode, and a silicon nitride film formed on the silicon dioxide film. The silicon nitride film has a thinner portion smaller in thickness than at least an end portion of the silicon nitride film entirely or partly over the photodiode.
1. A solid-state imaging element comprising:
a photodiode formed in an upper portion of a semiconductor substrate to perform a photoelectric conversion;
a transfer gate including a gate electrode formed on the semiconductor substrate and adjacent to the photodiode;
a first insulating film formed on the semiconductor substrate to cover the photodiode;
a second insulating film formed on the first insulating film and a part of the gate electrode and in contact with the first insulating film, wherein the second insulating film has a thinner portion smaller in thickness than at least an end portion of the second insulating film, the thinner portion of the second insulating film being entirely or partly over the photodiode; and
a third insulating film formed on the semiconductor substrate and a part of the gate electrode and having an opening so that the third insulating film is absent above the entire regions of the thinner portion of the second insulating film,
wherein the first insulating film is formed on a part of, but not an entirety of, a top of the gate electrode of the transfer gate.
2. The solid-state imaging element of claim 1 , wherein the thinner portion of the second insulating film smaller in thickness than at least the end portion of the second insulating film is the portion of the second insulating film exposed in the opening.
3. The solid-state imaging element of claim 1 , wherein
a refractivity of the second insulating film is different from that of the first insulating film, and
a thickness of the second insulating film is not less than 30 nm, and not more than 80 nm.
4. The solid-state imaging element of claim 1 , wherein
the first insulating film is made of a silicon dioxide film, and
the second insulating film is made of a silicon nitride film.
5. The solid-state imaging element of claim 1 , wherein
the third insulating film is made of a silicon nitride film.
6. The solid-state imaging element of claim 1 , wherein the substrate is n-type.
7. The solid-state imaging element of claim 6 further comprising a p-type well formed in the substrate.
8. The solid-state imaging element of claim 1 , wherein the first insulating film is formed on a side face of the gate electrode opposite to the photodiode.
9. The solid-state imaging element of claim 1 , wherein the second insulating film is formed on a side face of the gate electrode opposite to the photodiode.
10. The solid-state imaging element of claim 1 , wherein the third insulating film is formed on a floating diffusion in an upper portion of the semiconductor substrate located on a side of gate electrode opposite to the photodiode.
11. The solid-state imaging element of claim 10 , wherein the floating diffusion has a salicide layer.
12. The solid-state imaging element of claim 1 , wherein the third insulating film is made of a material larger in film stress than silicon.
13. The solid-state imaging element of claim 1 , wherein the third insulating film is overlapping the second insulating film.
14. The solid-state imaging element of claim 1 , wherein the third insulating film is made of a silicon nitride film.
15. The solid-state imaging element of claim 1 , wherein the third insulating film is made of a hydrogenated silicon nitride compound film.
16. The solid-state imaging element of claim 1 , wherein the gate electrode has a salicide layer.
17. The solid-state imaging element of claim 1 , wherein:
the transfer gate includes a gate insulating film, and
the transfer gate is disposed adjacent to the photodiode without interposing an isolation region.