Semiconductor device including a copolymer layer

1. A semiconductor device comprising:

a chip having a contact side and other sides and comprising an integrated circuit;

mold material on at least one of the other sides of the chip and having a surface flush with the contact side of the chip;

an insulating layer on the contact side of the chip and on the surface of the mold material flush with the contact side of the chip, wherein the insulating layer is in direct contact with the contact side of the chip and the insulating layer is in direct contact with the surface of the mold material flush with the contact side of the chip;

a conductive layer on the insulating layer and electrically coupled to the integrated circuit, wherein the insulating layer is situated between the conductive layer and the mold material;

a copolymer layer on the conductive layer and in contact with a surface of the insulating layer, wherein a portion of the surface of the insulating layer is not covered by the conductive layer or the copolymer layer; and

metal elements electrically coupled to the conductive layer via through-connects in the copolymer layer.

2. The semiconductor device of claim 1 , wherein the copolymer layer has a thickness of less than 1 micrometer.

3. The semiconductor device of claim 1 , wherein the conductive layer includes structured copper and the copolymer layer is disposed on the structured copper.

4. The semiconductor device of claim 1 , wherein the metal elements protrude from the conductive layer at least 100 micrometers.

5. The semiconductor device of claim 1 , wherein the metal elements are one of solder balls, solder bumps and solder studs.

6. A semiconductor device comprising:

a semiconductor chip having a contact side and other sides;

mold material on the other sides of the chip and having a surface flush with the contact side of the chip;

an insulating layer on the contact side of the chip and on the surface of the mold material flush with the contact side of the chip, wherein the insulating layer is in direct contact with the contact side of the chip and the insulating layer is in direct contact with the surface of the mold material flush with the contact side of the chip;

a redistribution layer on the insulating layer and electrically coupled to the contact side, wherein a portion of the redistribution layer extends beyond the perimeter of the semiconductor chip and the insulating layer is situated between the portion of the redistribution layer that extends beyond the perimeter of the semiconductor chip and the mold material;

a copolymer layer disposed on the redistribution layer and in contact with a surface of the insulating layer, wherein the redistribution layer and the copolymer layer leave uncovered a portion of the surface of the insulating layer; and

metal elements electrically coupled to the redistribution layer via through-connects in the copolymer layer.

7. The semiconductor device of claim 6 , wherein the copolymer layer has a thickness of less than 1 micrometer.

8. The semiconductor device of claim 6 , wherein the metal elements protrude from the conductive layer at least 100 micrometers.

9. The semiconductor device of claim 6 , wherein the redistribution layer includes structured copper and the copolymer layer is disposed on the structured copper.