Method for forming diamond-like carbon film
View Patent ↗Provided is a method for forming a diamond-like carbon (DLC) film capable of enhancing the adhesion strength of a diamond-like carbon (DLC) film by simple steps. A surface of a substrate 11 made of polytetrafluoroethylene (PTFE) is modified by plasma radiation, and a diamond-like carbon film 12 is formed on the modified PTFE substrate 11 surface by chemical vapor deposition.
1. A method for forming a diamond-like carbon film, comprising:
modifying a surface of a substrate comprising a metallic material by plasma radiation comprising nitrogen as a reaction gas to form a modified surface substrate; and
forming a diamond-like carbon film on the modified surface substrate by chemical vapor deposition;
wherein the substrate consists of nitinol or titanium.
2. The method of claim 1 , wherein methane, acetylene, or benzene are used in the chemical vapor deposition.
3. The method of claim 1 , wherein the chemical vapor deposition is a plasma chemical vapor deposition method.
4. The method of claim 1 , wherein a temperature of the plasma radiation is from about 25° C. to about 300° C.
5. The method of claim 1 , wherein the chemical vapor deposition is performed at a temperature of less than about 300° C.
6. The method of claim 1 , wherein a thickness of the diamond-like carbon film is from about 0.01 μm to about 1 μm.
7. The method of claim 1 , wherein the forming of the diamond-like carbon film is performed at a pressure of about 0.01 Pa to about 100 Pa.