IP Library Granted Patent US 7,749,326
Granted Patent B2
US 7,749,326 · App. 12/177,037 · Granted Jul 6, 2010

Chemical vapor deposition apparatus

Assignee: Samsung LED Co., Ltd.
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Quick Facts
Patent No.
US 7,749,326
App. No.
12/177,037
Granted
Jul 6, 2010
Kind
B2
Abstract

Provided is a chemical vapor deposition apparatus including a reaction chamber; a susceptor that is provided in the reaction chamber and has a plurality of wafers mounted thereon; a rotation driving unit that rotates the susceptor; a gas inlet that is provided in the reaction chamber and introduces reaction gas into the reaction chamber from the outside of the reaction chamber; a gas outlet that is provided in the reaction chamber and discharges the reaction gas, of which the reaction is finished, from the inside of the reaction chamber along the rotation-axis direction of the susceptor; and a variable gas-flow adjusting unit that is provided between the gas inlet and the gas outlet and is formed by superimposing a plurality of gas jetting plates having a plurality of holes.

Claims (18)

1. A chemical vapor deposition apparatus comprising:

a reaction chamber;

a susceptor that is provided in the reaction chamber and has a plurality of wafers mounted thereon;

a rotation driving unit that rotates the susceptor;

a gas inlet that is provided in the reaction chamber and introduces reaction gas into the reaction chamber from the outside of the reaction chamber;

a gas outlet that is provided in the reaction chamber and discharges the reaction gas, of which the reaction is finished, from the inside of the reaction chamber along the rotation-axis direction of the susceptor; and

a variable gas-flow adjusting unit that is provided between the gas inlet and the gas outlet within the reaction chamber and is formed by superimposing a plurality of gas jetting plates having a plurality of holes, wherein the plurality of jetting plates are rings arranged in a concentric formation.

2. The chemical vapor deposition apparatus according to claim 1 , wherein the plurality of gas jetting plates forming the variable gas-flow adjusting unit are superimposed toward the center of the reaction chamber from the outside of the reaction chamber.

3. The chemical vapor deposition apparatus according to claim 1 , wherein the variable gas-flow adjusting unit adjusts the reaction gas flow, depending on the overlapping area of the holes which overlap each other when one or more gas jetting plates among the plurality of gas jetting plates are rotated.

4. The chemical vapor deposition apparatus according to claim 1 , wherein the holes formed in the respective gas jetting plates forming the variable gas-flow adjusting unit are inclined in a direction eccentric with the rotation-axis center of the susceptor.

5. The chemical vapor deposition apparatus according to claim 4 , wherein the direction of the reaction gas jetted through the variable gas-flow adjusting unit is adjusted by adjusting the inclination angle of the holes formed in the respective gas jetting plates.

6. The chemical vapor deposition apparatus according to claim 4 , wherein the direction eccentric with the rotation-axis center of the susceptor is set to be reverse to the rotation direction of the susceptor.

7. The chemical vapor deposition apparatus according to claim 1 , wherein the holes formed in the respective gas jetting plates forming the variable gas-flow adjusting unit have a circular, elliptical, or polygonal shape.

8. The chemical vapor deposition apparatus according to claim 1 , wherein the holes formed in the respective gas jetting plates forming the variable gas-flow adjusting unit have a slit shape which extends in a horizontal or vertical direction.

9. The chemical vapor deposition apparatus according to claim 1 , wherein the holes formed in the adjacent gas jetting plates among the plurality of gas jetting plates forming the variable gas-flow adjusting unit have the same shape.

10. The chemical vapor deposition apparatus according to claim 1 , wherein the holes formed in the adjacent gas jetting plates among the plurality of gas jetting plates forming the variable gas-flow adjusting unit have different shapes from each other.

11. The chemical vapor deposition apparatus according to claim 1 further comprising:

a heating unit that is provided in one side of the susceptor so as to provide radiant heat to the susceptor.

Assignments (3)
MERGER Recorded Aug 7, 2012
From: SAMSUNG LED CO., LTD.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 028744/0272 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 14, 2010
From: SAMSUNG ELECTRO-MECHANICS CO., LTD.
To: SAMSUNG LED CO., LTD.
Reel/Frame 024386/0047 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 21, 2008
From: KIM, CHANG SUNG SEAN; HONG, JONG PA; GHIM, JOONG EL
To: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Reel/Frame 021268/0563 →
Priority Claims (1)
KR 10-2008-0047510 · May 22, 2008 · national
Continuity (1)
Related Publication 20090288604A1 · Nov 26, 2009