Single-photon avalanche detector-based focal plane array

1. A sensor comprising a plurality of pixels, wherein each pixel comprises

a first photodiode comprising a first doped region having a first perimeter, wherein the first photodiode is a single-photon avalanche diode that is physically adapted to provide a current pulse in response to a single received photon;

a first negative feedback element, wherein the first negative feedback element is electrically connected in series with the first photodiode, and wherein the first photodiode and the first negative feedback element are monolithically integrated such that the first negative feedback element is disposed above the first doped region and is substantially located completely within the first perimeter, and further wherein the first photodiode and the first negative feedback element collectively define a first negative-feedback avalanche diode; and

a circuit comprising a counter, wherein the circuit receives current pulses from the first photodiode and provides an output signal based on the number of current pulses received from the first photodiode within a time period.

2. The sensor of claim 1 wherein the first negative feedback element comprises a resistor, and wherein the resistor and the photodiode are monolithically integrated.

3. The sensor of claim 1 wherein the first negative feedback element comprises an inductor, and wherein the inductor and the photodiode are monolithically integrated.

4. The sensor of claim 1 wherein the first negative feedback element comprises an active circuit element.

5. The sensor of claim 1 wherein the first photodiode is disposed on a first substrate and the circuit is disposed on a second substrate.

6. The sensor of claim 1 further comprising a processor, wherein the processor provides a video signal based on the collective output signals provided by the plurality of pixels.

7. The sensor of claim 1 wherein the first photodiode produces a first electrical signal in response to receipt of a single photon that has a wavelength greater than 1000 nm.

8. The sensor of claim 1 wherein the first photodiode produces a first electrical signal in response to receipt of a single photon that has a wavelength within the range of approximately 1000 nm to approximately 3000 nm.

9. The sensor of claim 1 wherein the first photodiode produces a first electrical signal in response to receipt of a single photon that has a wavelength within the range of approximately 1000 nm to approximately 1700 nm.

10. A sensor comprising a focal plane array comprising an array of pixels, wherein each pixel comprises:

(1) a photodetector comprising a negative-feedback avalanche diode that is physically adapted to provide a first current pulse in response to a single received photon, wherein the negative-feedback avalanche diode comprises:

(i) a photodiode comprising a doped region having a perimeter; and

(ii) a negative feedback element, wherein the negative feedback element is electrically connected in series with the photodiode;

wherein the photodiode and the negative feedback element are monolithically integrated such that the negative feedback element is disposed above the first doped region and is substantially located completely within the first perimeter; and

(2) a read-out circuit;

wherein the read-out circuit receives the first current pulse and provides a first output signal based on the first current pulse.

11. The sensor of claim 10 wherein the read-out circuit comprises a counter, and wherein the counter counts the number of current pulses generated by the first photodetector, and wherein the read-out circuit provides a first electrical signal that is based on the count of the counter.

12. The sensor of claim 10 wherein the negative-feedback avalanche diode comprises a resistor, and wherein the resistor and the photodiode are monolithically integrated.

13. The sensor of claim 10 wherein the negative-feedback avalanche diode comprises an inductor, and wherein the inductor and the photodiode are monolithically integrated.

14. The sensor of claim 10 wherein the negative-feedback avalanche diode comprises an active circuit element.

15. A method for determining the intensity of light incident on a pixel comprising a negative-feedback avalanche diode and a read-out circuit, wherein the method comprises:

providing the negative-feedback avalanche diode such that it comprises:

(i) a photodiode comprising a doped region having a perimeter; and

(ii) a negative feedback element, wherein the negative feedback element is electrically connected in series with the photodiode:

wherein the photodiode and the negative feedback element are monolithically integrated such that the negative feedback element is disposed above the first doped region and is substantially located completely within the first perimeter; and

providing the read-out circuit such that it comprises a counter that is electrically coupled to the first photodetector;

receiving the light at the pixel;

generating a current pulse in response to a single photon contained in the light; and

increasing the count of the counter when the counter receives the current pulse from the first photodetector.

16. The method of claim 15 further comprising resetting the count of the counter at the start of a time period.

17. The method of claim 15 further comprising generating a first image data value for the pixel, wherein the first image data value is based on the count of the counter.

18. The method of claim 17 further comprising providing a video signal based on a plurality of output signals, wherein the plurality of output signals includes the first image data value.

19. The method of claim 15 further comprising providing the pixel such that the negative-feedback avalanche diode comprises a resistor and a photodiode, wherein the resistor and the photodiode are monolithically integrated.

20. The method of claim 15 further comprising providing the pixel such that the negative-feedback avalanche diode comprises an inductor and a photodiode, wherein the inductor and the photodiode are monolithically integrated.

21. The method of claim 15 further comprising providing the pixel such that the negative-feedback avalanche diode comprises an active circuit element, wherein the active circuit element and the photodiode are monolithically integrated.