Thin-film device, method for manufacturing thin-film device, and display
View Patent ↗A method for manufacturing a thin-film device includes forming a separation layer on a substrate, forming a base insulating layer on the separation layer, forming a thin-film device layer on the base insulating layer, bonding a transfer layer including the base insulating layer and the thin-film device layer to a transfer body with an adhesive, causing intralayer delamination or interfacial delamination in the separation layer, and removing the transfer layer from the substrate. The thin-film device layer includes a first wiring sublayer which is located at the bottom of the thin-film device layer and which is in contact with the base insulating layer, a dielectric sublayer which is in contact with a surface of the first wiring sublayer, a semiconductor sublayer electrically insulated from the first wiring sublayer with the dielectric sublayer, and a second wiring sublayer formed subsequently to the semiconductor sublayer. The first wiring sublayer includes electrodes located at the bottom of the thin-film device layer.
1. A method for manufacturing a thin-film device comprising:
forming a separation layer on a substrate;
forming a base insulating layer on the separation layer;
forming a thin-film device layer on the base insulating layer;
bonding a transfer layer including the base insulating layer and the thin-film device layer to a transfer body with an adhesive;
causing intralayer delamination or interfacial delamination in the separation layer; and
removing the transfer layer from the substrate,
wherein the thin-film device layer includes a first wiring sublayer which is located at the bottom of the thin-film device layer and which is in contact with the base insulating layer,
a dielectric sublayer which is in contact with a surface of the first wiring sublayer,
a semiconductor sublayer electrically insulated from the first wiring sublayer with the dielectric sublayer, and a second wiring sublayer formed subsequently to the semiconductor sublayer,
the first wiring sublayer includes an electrode located at the bottom of the thin-film device layer,
the electrode is a pixel electrode,
the second wiring sublayer includes a capacitor electrode, the capacitor electrode is opposed to the pixel electrode with the dielectric sublayer disposed therebetween, and the whole or a portion of the pixel electrode and the whole or a portion of the capacitor electrode form a capacitor, and
the thin-film device layer includes a thin-film transistor including a gate electrode that is a portion of the first wiring sublayer, a gate insulating zone that is a portion of the dielectric sublayer, a portion of the semiconductor sublayer, and a source electrode and drain electrode that are portions of the second wiring sublayer and the thin-film transistor has an inverted staggered structure in which the gate electrode, the gate insulating zone, the semiconductor sublayer, and the source and drain electrodes are arranged in that order.
2. A thin-film device manufactured by the method according to claim 1 , wherein the gate electrode has a width less than or equal to one tenth of that of the pixel electrode.