IP Library Granted Patent US 8,117,582
Granted Patent B2
US 8,117,582 · App. 12/183,036 · Granted Feb 14, 2012

Method for placing dummy patterns in a semiconductor device layout

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Quick Facts
Patent No.
US 8,117,582
App. No.
12/183,036
Granted
Feb 14, 2012
Kind
B2
Abstract

Disclosed is a method for placing dummy patterns in a semiconductor device layout. More specifically, the method places the dummy patterns densely between main patterns in accordance with a sequence and configuration. The method includes placing vertical dummies having a greater length than width in a region other than main patterns to form a first layout, removing the vertical dummies within a first distance from the main patterns to form a second layout, placing horizontal dummies having a greater length than width in a vacant space of the second layout to form a third layout, and removing the horizontal dummies within a second distance from the main patterns in the third layout. The method prevents and/or inhibits pattern deformation.

Claims (29)

1. A semiconductor device layout comprising:

main patterns;

vertical dummies in a region other than the main patterns and at least a first distance away from each of the main patterns, each of the vertical dummies having a greater length than width and a size that is inversely proportional to a density of the main patterns, and the first distance corresponds to a minimum design rule; and

horizontal dummies in a vacant space other than the main patterns and the vertical dummies, and not within a second distance of any of the main patterns, each of the horizontal dummies having a greater width than length and a size that is inversely proportional to the density of the main patterns.

2. The semiconductor device layout according to claim 1 , wherein the vertical and horizontal dummies have a rectangle shape.

3. The semiconductor device layout according to claim 1 , wherein the vertical dummies within the first distance from the main patterns in the first layout violate a minimum design rule.

4. The semiconductor device layout according to claim 1 , wherein the vertical dummies and the horizontal dummies have shapes rotated 90 degrees relative to each other.

5. The semiconductor device layout according to claim 1 , wherein the length of the vertical dummies and the width of the horizontal dummies are a multiple of the width of the vertical dummies and the length of the horizontal dummies, respectively.

6. The semiconductor device layout according to claim 1 , wherein the first distance has a value not more than 1.5 times the width of the vertical dummies.

7. The semiconductor device layout according to claim 1 , wherein the second distance has a value not more than 1.5 times the width of the horizontal dummies.

8. The semiconductor device layout according to claim 1 , wherein the vertical dummies in the first layout have identical sizes and shapes, and the horizontal dummies in the first layout have identical sizes and shapes.

9. A semiconductor device layout, comprising:

main patterns;

vertical dummies in a region other than the main patterns and at least a first distance away from each of the main patterns, each of the vertical dummies having a a first fixed width and greater length than the first fixed width, and the first distance corresponds to a minimum design rule and is not more than 1.5 times the first fixed width; and

horizontal dummies in a vacant space other than the main patterns and the vertical dummies, and not within a second distance of any of the main patterns, each of the horizontal dummies having a first fixed length and a greater width than the first fixed length, and the second distance is not more than 1.5 times the first fixed length.

10. The semiconductor device layout according to claim 9 , wherein the vertical dummies have a length equal to at least 3 times a width thereof, and the horizontal dummies have a width equal to at least 3 times a length thereof.

11. The semiconductor device layout according to claim 9 , wherein the vertical dummies have a length equal to at least 4 times a width thereof, and the horizontal dummies have a width equal to at least 4 times a length thereof.

12. The semiconductor device layout according to claim 9 , wherein the vertical dummies have a length equal to at least 5 times a width thereof, and the horizontal dummies have a width equal to at least 5 times a length thereof.

13. The semiconductor device layout according to claim 9 , wherein the vertical and horizontal dummies have a rectangle shape.

14. The semiconductor device layout according to claim 13 , wherein the vertical dummies in the first layout have identical sizes and shapes, and the horizontal dummies in the first layout have identical sizes and shapes.

15. A semiconductor device layout comprising:

main patterns;

vertical dummies in a region other than the main patterns and at least a first distance away from each of the main patterns, each of the vertical dummies having a greater length than width, wherein the vertical dummy has a length equal to at least 3 times a width thereof, and the first distance corresponds to a minimum design rule; and

horizontal dummies in a vacant space other than the main patterns and the vertical dummies, and not within a second distance of any of the main patterns, each of the horizontal dummies having a greater width than length, wherein the horizontal dummy has a width equal to at least 3 times a length thereof.

16. The semiconductor device layout according to claim 15 , wherein the horizontal and vertical dummies have a size that is inversely proportional to a density of the main patterns.

17. The semiconductor device layout according to claim 15 , wherein the vertical dummies have a first fixed width, and the first distance corresponds to a multiple of the first fixed width of the vertical dummies.

18. The semiconductor device layout according to claim 15 , wherein the horizontal dummies have a first fixed length, and the second distance corresponds to a multiple of the first fixed length of the horizontal dummies.

19. The semiconductor device layout according to claim 15 , wherein the vertical dummies in the first layout have identical sizes and shapes.

20. The semiconductor device layout according to claim 15 , wherein the horizontal dummies in the first layout have identical sizes and shapes.

Assignments (7)
CHANGE OF NAME Recorded Nov 19, 2025
From: TESSERA ADVANCED TECHNOLOGIES, INC.
To: ADEIA SEMICONDUCTOR ADVANCED TECHNOLOGIES INC.
Reel/Frame 073635/0304 →
RELEASE OF SECURITY INTEREST Recorded Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION; TESSERA ADVANCED TECHNOLOGIES, INC; DTS, INC.; DTS LLC; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
Reel/Frame 052920/0001 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
SECURITY INTEREST Recorded Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.; DIGITALOPTICS CORPORATION; DIGITALOPTICS CORPORATION MEMS; DTS, LLC; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 12, 2015
From: STRATEGIC GLOBAL ADVISORS OF OREGON, INC.
To: TESSERA ADVANCED TECHNOLOGIES, INC.
Reel/Frame 035620/0771 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 24, 2015
From: DONGBU HITEK CO., LTD.
To: STRATEGIC GLOBAL ADVISORS OF OREGON, INC.
Reel/Frame 035491/0744 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 31, 2008
From: LEE, YONG GUEN
To: DONGBU HITEK CO., LTD.
Reel/Frame 021324/0499 →