Thin-film transistor substrate and method of manufacturing the same

1. A method of manufacturing a thin-film transistor (TFT) substrate, the method comprising:

forming a semiconductor pattern layer on a substrate and a first wiring pattern on a top surface of the semiconductor pattern layer using a first mask, the first wiring pattern including an entire source electrode and an entire drain electrode spaced apart from the source electrode;

forming an insulation layer pattern covering the first wiring pattern and a second wiring pattern on the insulation layer pattern using a second mask, the second wiring pattern including a gate electrode formed on the source and drain electrodes; and

applying a plasma to a portion of the semiconductor pattern layer, which is uncovered by the insulation layer pattern, to change the portion of the semiconductor pattern layer to a conductive pattern.

2. The method of claim 1 , wherein forming the semiconductor pattern layer and the first wiring pattern comprises:

forming a metal oxide semiconductor and then a first conductive layer;

forming a first photoresist pattern on the first conductive layer using the first mask;

etching the first conductive layer and the metal oxide semiconductor to form a first conductive pattern layer from the first conductive layer and a second conductive pattern layer from the metal oxide semiconductor layer;

performing an etch back process to the first photoresist pattern to form a second photoresist pattern; and

etching the first conductive pattern to form the first wiring pattern.

3. The method of claim 1 , further comprising forming a color filter layer and a black matrix.

4. The method of claim 2 , wherein forming the insulation layer pattern and the second wiring pattern comprises:

forming an insulation layer and then a second conductive layer on a substrate having the first wiring pattern;

forming a third photoresist pattern on the second conductive layer using the second mask;

etching the second conductive layer to form a second conductive pattern layer;

etching the insulation layer to form the insulation layer pattern;

performing an etch back process to the third photoresist pattern to form a fourth photoresist pattern; and

etching the second conductive pattern layer to form a second wiring pattern.

5. The method of claim 4 , in etching the insulation layer to form the insulation layer pattern, wherein the insulation layer is etched to expose a portion of an edge of the first wiring pattern.

6. The method of claim 5 , wherein the plasma process of the semiconductor pattern layer uses the first and second wiring patterns as a mask.

7. A method of manufacturing a thin-film transistor (TFT) substrate, the method comprising:

forming a semiconductor pattern, which forms a channel of the thin-film transistor, on a substrate and a first wiring pattern on a top surface of the semiconductor pattern using a first mask, the semiconductor pattern including a metal oxide semiconductor, and the first wiring pattern including an entire source electrode and an entire drain electrode spaced apart from the source electrode;

forming an insulation layer pattern covering the first wiring pattern and a second wiring pattern on the insulation layer pattern using a second mask, the second wiring pattern including a gate electrode formed on the source and drain electrodes;

forming a color filter layer covering the gate electrode and the insulation layer pattern; and

forming a conductive pattern on the color filter layer using a third mask, the conductive pattern including a pixel electrode electrically connected to the drain electrode.

8. The method of claim 7 , further comprising forming a a light-blocking layer.