Semiconductor device
View Patent ↗A semiconductor device includes an optical semiconductor element, a package including a base made of a metal for mounting the optical semiconductor element, and a cap for encapsulating the optical semiconductor element and a gas by covering the package and the optical semiconductor element. The gas encapsulated with the package has an oxygen concentration not less than 15% and less than 30% and has a dew-point not less than −15° C. and not more than −5° C.
1. A semiconductor device comprising:
an optical semiconductor element;
a package including a base made of a metal for mounting the optical semiconductor element; and
a cap for encapsulating the optical semiconductor element and a gas by covering the package and the optical semiconductor element,
wherein a first edge coating made of a material including zirconium is disposed on an emitting end facet of the optical semiconductor element, and
a water absorption layer is disposed on the first edge coating.
2. The semiconductor device of claim 1 , wherein the optical semiconductor element is a semiconductor laser diode or an edge emitting light emitting diode including a cavity formed by opposing end facets.
3. The semiconductor device of claim 1 , wherein the optical semiconductor element emits light of a wavelength of 450 nm or less.
4. The semiconductor device of claim 1 , wherein the optical semiconductor element is made of a nitride semiconductor material.
5. The semiconductor device of claim 1 , wherein the gas includes 70% or more of inert gas.
6. The semiconductor device of claim 5 , wherein the inert gas includes at least one of nitrogen and argon.
7. The semiconductor device of claim 5 , wherein the inert gas is nitrogen.
8. The semiconductor device of claim 1 , further comprising a sub-mount provided between the optical semiconductor element and the base and having a high heat dissipation property.
9. The semiconductor device of claim 1 , wherein a portion of the package excluding the base is made of a metal,
the cap includes a cylindrical metal member and a transparent optical member provided on the metal member for transmitting output light from the optical semiconductor element, and
the package and the metal member are welded to each other.
10. The semiconductor device of claim 1 , wherein a portion of the package excluding the base is made of a resin,
the cap is made of a transparent optical member, and
the package and the cap are adhered to each other through an adhesive.
11. The semiconductor device of claim 1 , wherein a portion of the package excluding the base is made of ceramics,
the cap is made of a transparent optical member, and
the package and the cap are adhered to each other through an adhesive.
12. The semiconductor device of claim 1 , further comprising a light receiving element or a semiconductor element including a light receiving element provided between the optical semiconductor element and the base.
13. The semiconductor device of claim 12 , wherein the optical semiconductor element is mounted on a principal plane of the semiconductor element or in a recess formed on the principal plane.
14. The semiconductor device of claim 1 , wherein the gas has an oxygen concentration not less than 15% and less than 30%, and has a dew-point not less than −15° C. and not more than −5° C.
15. The semiconductor device of claim 14 , wherein the gas has a dew-point greater than −10° C. and not more than −5° C.
16. The semiconductor device of claim 1 ,
wherein the first edge coating on the emitting end facet is made of zirconium oxide.
17. The semiconductor device of claim 1 , further comprising a second edge coating disposed on another end facet opposite to the emitting end facet of the optical semiconductor element.