MEEF reduction by elongation of square shapes
View Patent ↗A method that purposely relaxes OPC algorithm constraints to allow post OPC mask shapes to elongate along one direction (particularly lowering the 1-dimensional MEEF in this direction with the result of an effectively overall lowered MEEF) to produce a pattern on wafer that is circular to within an acceptable tolerance.
1. A method comprising:
obtaining a target layout including at least one substantially square target shape having four edges;
modifying the at least one substantially square target shape in the target layout to form a rectangular shape by at least one of: moving at least one edge of the substantially square target shape in the target layout or pre-defining at least one dimension of a final modified mask layout; and
performing, by a computer, an optical proximity correction (OPC) on the target layout after the modifying to produce the final modified mask layout having a pattern that will form the rectangular shape circular to within a predefined tolerance when the final modified mask layout is transferred into a resist layer.
2. The method of claim 1 , wherein the rectangular shape has an aspect ratio of larger than about 1:1.
3. The method of claim 1 , wherein the at least one substantially square target shape includes a plurality of substantially square target shapes.
4. The method of claim 3 , wherein the modifying is applied to all of the plurality of substantially square target shapes to form a plurality of rectangular shapes.
5. The method of claim 3 , wherein the modifying is applied to only those substantially square target shapes in at least one highest density region.
6. The method of claim 1 , wherein the at least one edge of the at least one substantially square target shape that is elongated is determined by a density of targets in any given direction.
7. The method of claim 1 , further comprising limiting movement of an edge during the OPC performing.
8. A system comprising:
at least one computing device;
an obtainer for obtaining a target layout including at least one substantially square target shape having four edges;
a modifier for modifying the at least one substantially square target shape in the target layout to form a rectangular shape by at least one of: moving at least one edge of the substantially square target shape in the target layout or pre-defining at least one dimension of a final modified mask layout; and
an optical proximity correction (OPC)module for performing an optical proximity correction on the target layout after the modifying to produce the final modified mask layout having a pattern that will form the rectangular shape circular to within a predefined tolerance when the final modified mask layout is transferred into a resist layer.
9. The system of claim 8 , wherein the rectangular shape has an aspect ratio of larger than about 1:1.
10. The system of claim 8 , wherein the at least one substantially square target shape includes a plurality of substantially square target shapes.
11. The system of claim 10 , wherein the modifying means modifies all of the plurality of substantially square target shapes to form a plurality of rectangular shapes.
12. The system of claim 10 , wherein the modifying means modifies only those substantially square target shapes in at least one highest density region.
13. The system of claim 8 , wherein the at least one edge of the at least one substantially square target shape that is elongated is determined by a density of targets in any given direction.
14. The system of claim 8 , further comprising means for limiting movement of an edge during the OPC performing.
15. A program product stored on a non-transitory computer-readable medium, which when executed by a computer system, performs the process comprising:
obtaining a target layout including at least one substantially square target shape having four edges;
modifying the at least one substantially square target shape in the target layout to form a rectangular shape by at least one of: moving at least one edge of the substantially square target shape in the target layout or pre-defining at least one dimension of a final modified mask layout; and
performing an optical proximity correction (OPC) on the target layout after the modifying to produce the final modified mask layout having a pattern that will form the rectangular shape circular to within a predefined tolerance when the final modified mask layout is transferred into a resist layer.
16. The program product of claim 15 , wherein the rectangular shape has an aspect ratio of larger than about 1:1.
17. The program product of claim 15 , wherein the at least one substantially square target shape includes a plurality of substantially square target shapes.
18. The program product of claim 17 , wherein the modifying is applied to all of the plurality of substantially square target shapes to form a plurality of rectangular shapes.
19. The program product of claim 15 , wherein the at least one edge of the at least one substantially square target shape that is elongated is determined by a density of targets in any given direction.
20. The program product of claim 15 , the process further comprising limiting movement of an edge during the OPC performing.