IP Library Patent Application 12191965
Patent Application
App. No. 12/191,965

POLARIZER FILMS AND METHODS OF MAKING THE SAME

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Patent No.
US None
App. No.
12/191,965
Abstract

In general, in one aspect, the invention features an article that includes a layer including a plurality of spaced-apart portions of a first material extending along a first direction. The layer transmits about 20% or more of light of wavelength λ having a first polarization state incident on the layer along a path. The layer transmits about 2% or less of light of wavelength λ having a second polarization state incident on the layer along the path, the first and second polarization states being orthogonal. For wavelength λ, the first material has a refractive index of 1.8 or more and an extinction coefficient of 1.8 or more, and λ is 300 nm or less.

Claims (69)

1 . An article, comprising:

a layer including a plurality of spaced-apart portions of a first material extending along a first direction, wherein:

the layer transmits about 20% or more of light of wavelength λ having a first polarization state incident on the layer along a path,

the layer transmits about 2% or less of light of wavelength λ having a second polarization state incident on the layer along the path, the first and second polarization states being orthogonal,

for wavelength λ, the first material has a refractive index of 1.8 or more and an extinction coefficient of 1.8 or more, and

λ is 300 nm or less.

2 . The article of claim 1 , wherein the first material is a metal.

3 . The article of claim 2 , wherein the metal is tungsten, titanium, chromium, nickel, Pt, molybdenum, vanadium, palladium, or iridium.

4 . The article of claim 1 , wherein the first material is a metal oxide.

5 . The article of claim 4 , wherein the metal oxide is titanium dioxide or indium tin oxide.

6 . The article of claim 1 , wherein the first material is a semiconductor material.

7 . The article of claim 6 , wherein the semiconductor material is silicon, germanium, indium phosphide, or SiGe.

8 . The article of claim 1 , wherein the first material is a metal silicide.

9 . The article of claim 1 , wherein the adjacent spaced apart portions are separated by a distance of about 150 nm or less.

10 . The article of claim 1 , wherein the spaced apart portions have a depth of about 50 nm or more.

11 . The article of claim 1 , wherein the spaced apart portions have an aspect ratio of about 1:1 or more.

12 . The article of claim 1 , wherein the spaced apart portions are arranged to form a grating.

13 . The article of claim 12 , wherein the grating has a period of about 200 nm or less.

14 . The article of claim 12 , wherein the grating has a duty cycle of about 60% or less.

15 . The article of claim 12 , wherein the grating has a rectangular, trapezoidal, or triangular cross-sectional profile.

16 . The article of claim 1 , further comprising a plurality of spaced apart portions of a second material extending along the first direction, wherein the first and second materials are different.

17 . The article of claim 16 , wherein the second material is a metal.

18 . The article of claim 17 , wherein the second material is Al, Au, Ag, or Cu.

19 . The article of claim 16 , wherein the second material is a dielectric material.

20 . The article of claim 16 , wherein the second material is an oxide.

21 . The article of claim 16 , wherein each two portions of the first material are disposed on opposing surfaces of a corresponding portion of the second material.

22 . The article of claim 21 , wherein the two portions of the first material form side walls of the corresponding portion of the second material.

23 . The article of claim 22 , wherein portions of the first material that form side walls of adjacent portions of the second material are separated by a gap.

24 . The article of claim 1 , wherein λ is about 260 nm or less.

25 . The article of claim 24 , wherein λ is in a range from about 230 nm to about 260 nm.

26 . The article of claim 1 , the layer transmits about 30% or more of light of wavelength λ having the first polarization state incident on the layer along the path.

27 . The article of claim 1 , wherein the layer transmits about 1% or less of light of wavelength λ having the second polarization state incident on the layer along the path.

28 . The article of claim 1 , wherein the layer has an extinction ration of about 30 or more at λ.

29 . The article of claim 1 , wherein the layer reflects about 20% or less of light of wavelength λ having the second polarization state incident on the layer along the path.

30 . The article of claim 1 , further comprising a second layer including a plurality of spaced-apart portions of a second material extending along the first direction, the second material being different from the first material, wherein:

the second layer transmits about 20% or more of light of wavelength λ having the first polarization state incident on the layer along the path,

the layer transmits about 2% or less of light of wavelength λ having the second polarization state incident on the layer along the path, the first and second polarization states being orthogonal, and λ<λ′.

31 . The article of claim 30 , wherein λ′ is in a range from about 400 nm to about 700 nm.

32 . The article of claim 30 , wherein the first material is a dielectric material and the second material is a metal.

33 . The article of claim 1 , further comprising a substrate supporting the layer.

34 . A system, comprising:

a radiation source; and

the article of claim 1 ,

wherein the radiation source is configured to direct radiation at λ toward the article.

35 . A method, comprising:

using the article of claim 1 to provide polarized radiation at 2; and

directing the polarized radiation to a target.

36 . The method of claim 35 , wherein the target comprises an alignment layer for a liquid crystal display.

37 . An article, comprising:

a layer including a plurality of spaced-apart portions of a first material extending along a first direction, wherein:

the layer transmits about 20% or more of light of wavelength λ having a first polarization state incident on the layer along a path,

the layer transmits about 2% or less of light of wavelength λ having a second polarization state incident on the layer along the path, the first and second polarization states being orthogonal,

the first material is a metal oxide, tungsten, or silicon, and

λ is 300 nm or less.

38 . An article, comprising:

a layer including a plurality of spaced-apart portions of a first material extending along a first direction, wherein:

for a cross-sectional profile through the layer orthogonal to the first direction, adjacent portions have a minimum separation of about 100 nm or less and the portions have a width of about 100 nm or less,

for wavelength λ, the first material has a refractive index of 1.8 or more and an extinction coefficient of 1.8 or more, and

λ is 300 nm or less.

39 . An article, comprising:

a layer including a plurality of spaced-apart portions of a first material extending along a first direction, wherein:

for a cross-sectional profile through the layer orthogonal to the first direction, adjacent portions have a minimum separation of about 100 nr or less and the portions have a width of about 100 nm or less,

the first material is a metal oxide, tungsten, or silicon, and

λ is 300 nm or less.

40 . An article, comprising:

a layer comprising:

a plurality of spaced apart portions of a first material arranged to form a first grating having a first period; and

a plurality of spaced apart portions of a second material arranged to form a second grating having a second period,

wherein the first and second periods are different, one of the first and second materials is a metal, the other of the first and second materials is a dielectric material, and adjacent portions of the first material are separated by two adjacent portions of the second material.

Assignments (12)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 22, 2016
From: POLARIZATION SOLUTIONS, LLC.
To: USHIO DENKI KABUSHIKI KAISHA
Reel/Frame 040255/0079 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 10, 2012
From: NANTOPTICS, LLC
To: POLARIZATION SOLUTIONS, LLC
Reel/Frame 029438/0661 →
CHANGE OF NAME Recorded Dec 10, 2012
From: ABRAXIS BIOSENSORS, LLC
To: NANTOPTICS, LLC
Reel/Frame 029441/0526 →
NUNC PRO TUNC ASSIGNMENT Recorded Jun 20, 2012
From: NANOOPTO CORPORATION
To: API NANOFABRICATION AND RESEARCH CORPORATION
Reel/Frame 028410/0956 →
NUNC PRO TUNC ASSIGNMENT Recorded Mar 23, 2011
From: LIU, FENG
To: NANOOPTO CORPORATON
Reel/Frame 026004/0289 →
NUNC PRO TUNC ASSIGNMENT Recorded Mar 23, 2011
From: DENG, XUEGONG
To: NANOOPTO CORPORATION
Reel/Frame 026004/0193 →
NUNC PRO TUNC ASSIGNMENT Recorded Mar 23, 2011
From: LIU, XIAOMING MARK
To: NANOOPTO CORPORATION
Reel/Frame 026004/0283 →
NUNC PRO TUNC ASSIGNMENT Recorded Mar 23, 2011
From: WANG, JIAN JIM
To: NANOOPTO CORPORATION
Reel/Frame 026004/0333 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2010
From: FISH & RICHARDSON P.C.
To: API NANOFABRICATION AND RESEARCH CORP.
Reel/Frame 024964/0677 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 9, 2010
From: API NANOFABRICATION AND RESEARCH CORPORATION
To: ABRAXIS BIOSENSORS, LLC
Reel/Frame 024964/0001 →
LIEN Recorded Mar 24, 2010
From: API NANOFABRICATION AND RESEARCH CORP.
To: FISH & RICHARDSON P.C.
Reel/Frame 024128/0344 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 20, 2008
From: WANG, JIAN JIM
To: NANOOPTO CORPORATION
Reel/Frame 021420/0971 →