Semiconductor device having a contact hole with a curved cross-section and its manufacturing method
A semiconductor device includes: a ferroelectric capacitor including a first electrode provided above a substrate, a ferroelectric film provided on the first electrode and a second electrode provided on the ferroelectric film; a hydrogen barrier film that covers a top surface and a side surface of the ferroelectric capacitor; an interlayer dielectric film that covers the ferroelectric capacitor and the substrate; a contact hole that penetrates the interlayer dielectric film and the hydrogen barrier film and exposes the second electrode; a barrier metal that covers a top surface of the second electrode exposed in the contact hole and an inner wall surface of the contact hole and is composed of a conductive material having hydrogen barrier property; and a plug conductive section that is embedded in the contact hole and conductively connects to the barrier metal, wherein the inner wall surface of the contact hole at the hydrogen barrier film includes a concave curved surface facing the interior of the contact hole, and the contact hole at the hydrogen barrier film has an inner diameter that gradually becomes smaller toward the second electrode.
1. A semiconductor device comprising:
a ferroelectric capacitor including a first electrode, a ferroelectric film, and a second electrode, the first electrode being disposed above a substrate, the ferroelectric film being disposed on the first electrode, the second electrode being disposed on the ferroelectric film;
a hydrogen barrier film disposed on a top surface and a side surface of the ferroelectric capacitor;
an interlayer dielectric film disposed on the hydrogen barrier film;
a first contact hole that opens the interlayer dielectric film;
a second contact hole that opens the hydrogen barrier film on the second electrode, the second contact hole connecting to the first contact hole;
a barrier metal that suppresses a diffusion of hydrogen, the barrier metal disposed on a top surface of the second electrode, an inner wall surface of the first contact hole, and an inner wall surface of the second contact hole; and
a plug section disposed on the barrier metal in the first contact hole,
a cross section of the inner wall surface of the second contact hole being concave,
an angle between a tangential line of the cross section of the inner wall surface of the second contact hole and a top surface of the second electrode decreasing as a distance from a top surface of the hydrogen barrier film to a bottom surface of the hydrogen barrier film increasing for an entirety of the second contact hole,
an area of a bottom surface of the second contact hole being smaller than an area of a top surface of the second contact hole.
2. A semiconductor device according to claim 1 , comprising a stopper film that covers the hydrogen barrier film on the ferroelectric capacitor, wherein the stopper film is formed from a dielectric material having a smaller etching rate than an etching rate of the interlayer dielectric film.
3. A semiconductor device according to claim 2 , wherein the stopper film is formed from a material having an etching selection ratio of 15 or higher with respect to the interlayer dielectric film.
4. A semiconductor device according to claim 2 , wherein the stopper film has hydrogen barrier property.
5. A semiconductor device according to claim 2 , wherein the stopper film is formed from silicon nitride.
6. The semiconductor device according to claim 1 , further comprising:
a stopper film disposed between the hydrogen barrier film and the interlayer dielectric film;
a third contact hole that opens the stopper film; and
the third contact hole connecting the first contact hole and the second contact hole.
7. The semiconductor device according to claim 6 , wherein the stopper film entirely covers the hydrogen barrier film.
8. The semiconductor device according to claim 6 , wherein the stopper film includes silicon nitride, and the hydrogen barrier film includes aluminum oxide.
9. The semiconductor device according to claim 1 , wherein the barrier metal has a layered structure, and the layered structure includes a titanium layer and a titanium nitride layer.
10. The semiconductor device according to claim 9 , wherein the plug section includes tungsten.
11. The semiconductor device of claim 1 , wherein a cross section of the inner wall surface of the second contact hole includes a radius of curvature.
12. A method of manufacturing a semiconductor device, comprising:
forming a ferroelectric capacitor above a substrate, the ferroelectric capacitor including a first electrode, a ferroelectric film, and a second electrode;
forming a hydrogen barrier film on the ferroelectric capacitor;
forming a stopper film on the hydrogen barrier film;
forming an interlayer dielectric film on the hydrogen barrier film;
forming a first contact hole by etching the interlayer dielectric film;
etching the stopper film, an etching rate of the stopper film being smaller than an etching rate of the interlayer dielectric film;
forming a second contact hole by etching the hydrogen barrier film;
forming a barrier metal on a top surface of the second electrode, an inner wall surface of the first contact hole, and an inner wall surface of the second contact hole, the barrier metal suppressing a diffusion of hydrogen; and
forming a plug section on the barrier metal in the first contact hole;
a cross section of the inner wall surface of the second contact hole being concave,
an angle between a tangential line of the cross section of the inner wall surface of the second contact hole and a top surface of the second electrode decreasing as a distance from a top surface of the hydrogen barrier film to a bottom surface of the hydrogen barrier film increasing for an entirety of the second contact hole.
13. The method of claim 12 , wherein a cross section of the inner wall surface of the second contact hole includes a radius of curvature.