Localized trigger ESD protection device
View Patent ↗The present invention provides an ESD device to reduce the total triggering current without increasing the overshoot voltage. This is achieved by localizing the triggering current, such that the local current density remains high enough to trigger the ESD device. This localized triggering provides a fast and efficient triggering of the ESD device.
1. An electrostatic discharge (ESD) protection device comprising:
an anode formed within a first lightly doped region and a cathode formed within a second lightly doped region;
wherein at least one of the anode and the cathode includes an extension to provide localized current to trigger the device; and wherein the extension is formed in only a portion of the at least one of the anode and the cathode.
2. The ESD device of claim 1 the extension is formed along a portion of the width axis of the device.
3. The ESD device of claim 2 comprising a first LAC and a second LAC; wherein said second LAC is a spacing between the anode and the cathode which is smaller than the second LAC and wherein the first LAC is one of:
a minimum spacing between the anode and the extension of the cathode,
a minimum spacing between the cathode and the extension of the anode, and
a minimum spacing between the extension of the anode and the extension of the cathode.
4. The ESD device of claim 3 wherein the anode includes an extension and the cathode includes an extension.
5. The ESD device of claim 4 wherein the extension of the anode is positioned centrally along the width axis of the anode and the extension of the cathode is positioned centrally along the width axis of the cathode.
6. The ESD device of claim 4 wherein the extension of the anode is positioned either upwards or downwards along the width axis of the anode and the extension of the cathode is positioned either upwards or downwards along the width axis of the cathode.
7. The ESD device of claim 4 wherein the first LAC is the spacing between the extension of the anode and the extension of the cathode.
8. The ESD device of claim 7 wherein the extensions of the anode and the cathode are placed at the same position along the width of the axis of the device to provide for a minimum spacing for the first LAC.
9. The ESD device of claim 1 further comprising at least one contact placed on at least the extension.
10. The ESD device of claim 1 wherein the ESD device further comprises an SCR.
11. The ESD device of claim 1 wherein the ESD device is a diode and wherein the first and second lightly doped regions are of the same conductivity type.
12. The ESD device of claim 11 wherein the diode comprises at least one of a pn junction diode, a shallow trench isolation (STI) diode, a non-STI diode, and a gated diode.
13. The ESD protection device of claim 1 wherein the extension is partly formed in a portion of one of the first lightly doped region and the second lightly doped region.
14. The ESD device of claim 13 further comprising a first highly doped region formed within the first lightly doped region and a second highly doped region formed within the second lightly doped region.
15. The ESD device of claim 14 wherein said region the extension comprises one of the first highly doped region and the second highly doped region.
16. The ESD device of claim 14 wherein the length of the first highly doped region is greater than the length of the anode.
17. The ESD device of claim 14 wherein the length of the second highly doped region is greater than the length of the cathode.
18. The ESD device of claim 14 wherein the length of the first highly doped region is greater than the length of the anode and the length of the second highly doped region is greater than the length of the cathode.
19. An electrostatic discharge (ESD) protection device comprising:
an anode formed within a first lightly doped region and a cathode formed within a second lightly doped region; and
a gate region comprising oxide formed over only a portion of the width axis of the anode or cathode to provide localized current to trigger the device.
20. The ESD device of claim 19 wherein the gate oxide region comprises polycrystalline silicon (polysilicon) over an active area, and wherein the active area comprises an area of a highly doped region excluding isolation.
21. The ESD device of claim 19 wherein the gate oxide region comprises a polycrystalline silicon (polysilicon) over isolation.
22. The ESD device of claim 19 further comprising a first highly doped region formed within the first lightly doped region and a second highly doped region formed within the second lightly doped region.
23. The ESD device of claim 19 wherein the gate oxide region extends beyond the anode.
24. The ESD device of claim 19 wherein the gate oxide region extends beyond the cathode.
25. The ESD device of claim 19 wherein the ESD device further comprises an SCR.
26. The ESD device of claim 19 wherein the ESD device is a diode and wherein the first and second lightly doped regions are of the same conductivity type.
27. The ESD device of claim 26 wherein the diode comprises at least one of a pn junction diode, a standard trench isolation (STI) diode, a non-STI diode, and a gated diode.
28. The ESD protection device of claim 19 wherein the gate oxide region is partly formed over a portion of one of the first lightly doped region and the second lightly doped region.
29. An electrostatic discharge (ESD) protection device comprising:
an anode formed within a first lightly doped region and a cathode formed within a second lightly doped region; and
a third region formed over only a portion of the width axis of the anode or cathode to provide localized current to trigger the device, wherein the third region excludes any type of isolation.
30. The ESD protection device of claim 29 wherein the third region is partly formed over a portion of one of the first lightly doped region and the second lightly doped region.