Method for manufacturing semiconductor device having via plug
View Patent ↗A method for manufacturing a semiconductor device, including: forming a first conductive layer on a first insulating film; forming a second insulating film so as to cover the first conductive layer; forming a resist mask on the second insulating film; forming a hole reaching the first conductive layer in the second insulating film by a first etching using the resist mask; removing the resist mask; removing the first conductive layer exposed at the bottom of the hole by a second etching, so that the hole reaches the first insulating film and the first conductive layer exposes at a side surface within the hole; forming a conductive plug in contact with the first conductive layer exposed at the side surface within the hole by burying a conductive material in the hole; and forming a second conductive layer to be connected to the conductive plug on the second insulating film.
1. A method for manufacturing a semiconductor device, comprising:
forming a first conductive layer on a first insulating film;
forming a second insulating film so as to cover said first conductive layer;
forming a resist mask on said second insulating film;
forming a hole reaching said first conductive layer in said second insulating film by means of first dry etching using said resist mask;
removing said resist mask;
removing said first conductive layer exposed at the bottom of said hole by means of second dry etching, so that said hole reaches said first insulating film and said first conductive layer exposes at a side surface within said hole;
forming a conductive plug in contact with said first conductive layer exposed at the side surface within said hole by burying a conductive material in said hole; and
forming a second conductive layer to be connected to said conductive plug on said second insulating film.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein the removal of said resist mask is achieved by dry etching, and said first dry etching, said dry etching for removing said resist mask, and said second dry etching are performed within the same dry etching apparatus.
3. The method for manufacturing a semiconductor device according to claim 2 , wherein said dry etching apparatus is a reactive ion etching apparatus.
4. The method for manufacturing a semiconductor device according to claim 1 , wherein said resist mask is formed of a carbon-containing resist.
5. The method for manufacturing a semiconductor device according to claim 1 , wherein said resist mask is formed of an organic resist.
6. The method for manufacturing a semiconductor device according to claim 1 , wherein a fluorocarbon-containing etching gas selected from the group consisting of C 4 F 8 , C 5 F 8 and C 4 F 6 is used in said first dry etching, an oxygen-containing gas is used in said dry etching for removing said resist mask, and a fluorocarbon-containing etching gas selected from the group consisting of CF 4 , CH 3 F, CH 2 F 2 and CHF 3 is used in said second dry etching.