Semiconductor device
View Patent ↗In one embodiment of the present invention, a semiconductor device has a photodiode over a P-type substrate, an NPN transistor formed over the P-type substrate, an N + -type buried region provided right under the NPN transistor as being buried in the P-type substrate, and a P + -type buried region formed in the N + -type buried region.
1. A semiconductor device having a light receiving element over a first-conductivity-type substrate, comprising:
a bipolar transistor formed over said first-conductivity-type substrate, the bipolar transistor having a second-conductivity-type well and a collector composed of a second-conductivity-type diffusion layer provided as being brought into contact with said second-conductivity-type well;
a second-conductivity-type buried region, reversed in the conductivity type from the first conductivity type, provided right under said bipolar transistor as being buried in said first-conductivity-type substrate; and
a first-conductivity-type buried region provided in said second-conductivity-type buried region and being brought into contact with said second-conductivity-type well.
2. The semiconductor device as claimed in claim 1 ,
wherein said bipolar transistor further comprises:
a first-conductivity-type body region formed in said second-conductivity-type well; and
a base composed of a first-conductivity-type diffusion layer and an emitter composed of a second-conductivity-type diffusion layer, both formed in said first-conductivity-type body region;
wherein said collector is formed as being spaced from said first-conductivity-type body region.
3. The semiconductor device as claimed in claim 2 , further comprising:
a capacitor provided in parallel with said bipolar transistor, on said first-conductivity-type substrate;
an additional second-conductivity-type buried region provided right under said capacitor as being buried in said first-conductivity-type substrate; and
an additional first-conductivity-type buried region provided in said additional second-conductivity-type buried region right under said capacitor.
4. The semiconductor device as claimed in claim 3 , further comprising a resistor portion provided in parallel with said capacitor, on said first-conductivity-type substrate, and
having no LOCOS film provided right under said resistor portion.
5. The semiconductor device as claimed in claim 1 , wherein said bipolar transistor is an NPN transistor.
6. The semiconductor device as claimed in claim 1 , wherein a reverse bias is applied between said first-conductivity-type substrate and said second-conductivity-type buried region.