Semiconductor chip and semiconductor device having a plurality of semiconductor chips

1. A semiconductor chip, comprising:

an internal circuit; and

a first protective electrode pad electrically connected to a ground bus line of the semiconductor chip in a region where an active electrode pad, which gives and receives electric signals required for an operation of the internal circuit, can not be provided.

2. A semiconductor chip, comprising:

an internal circuit;

a surface having a first side and a second side orthogonal to the first side;

an outermost pair of a power supply bus line and a ground bus line extending generally parallel to the first side or the second side on the surface;

a plurality of active electrode pads for giving and receiving electric signals necessary for the operation of the internal circuit provided along the first side and the second side in a circumference region which is between (a) an outside bus line of the outermost pair of the power supply bus line and the ground bus line, and (b) the first and second sides; and

a first protective electrode pad disposed in a region of the circumference region between a closest active electrode pad to the second side among the plurality of active electrode pads disposed along the first side and a closest active electrode pad to the first side among the plurality of active electrode pads disposed along the second side.

3. The semiconductor chip according to claim 1 , wherein the first protective electrode pad is designed for electrically connecting to a ground bus line of another semiconductor chip.

4. The semiconductor chip according to claim 2 , wherein the first protective electrode pad is designed for electrically connecting to a ground bus line of another semiconductor chip.

5. A semiconductor chip, comprising:

a surface having a first side and a second side orthogonal to the first side;

an outermost pair of a power supply bus line and a ground bus line extending generally parallel to the first side or the second side on the surface; and

an first protective electrode pad provided in a circumference corner region on. the surface, and electrically connected to the ground bus line,

wherein the circumference corner region included in an overlap of both a circumference region and a corner region on the surface,

the circumference region being between (a) an outside bus line of the outermost pair of the power supply bus line and the ground bus line, and (b) the first and second sides, and

the corner region being outside of both a first parallel line paralleling the first side a first distance distal from the first side and a second parallel line paralleling the second side a second distance distal from the second side,

the first distance being a distance between the first side and a portion of an inside bus line of the outermost pair of the power supply bus line and the ground bus line, the portion paralleling the first side, and

the second distance being a distance between the second side and a portion of the inside bus line, the portion paralleling the second side.

6. The semiconductor chip according to claim 5 , further comprising a first electrostatic discharge protection circuit electrically connected between the first protection electrode pad and the ground bus line in the corner region.

7. The semiconductor chip according to claim 6 , further comprising a second electrode pad electrically connected to the first electrostatic discharge protection circuit and the ground bus line in a circumference non-corner region, the circumference non-corner region being a region included by the circumference region and not included by the corner region.

8. The semiconductor chip according to claim 7 , wherein a plurality of electrode pads including the second electrode pad arc provided in the circumference non-corner region, the second electrode pad being disposed at the closest position to the first electrostatic discharge protection circuit among the plurality of electrode pads.

9. The semiconductor chip according to claim 8 , wherein the first protection electrode pad, the first electrostatic discharge protection circuit and the second electrode pad are continuously disposed along the first side or the second side.

10. The semiconductor chip according to claim 6 , further comprising a second electrostatic discharge protection circuit electrically connected between the first protection electrode pad and the power supply bus line in the corner region.

11. A semiconductor device including a first semiconductor chip having an internal circuit and a second semiconductor chip on one mounting substrate, wherein

the first semiconductor chip has a first protection electrode pad electrically connected to a ground bus line of the first semiconductor chip in a region where an active electrode pad, which gives and receives electric signals required for an operation of the internal circuit, can not be provided, the first protection electrode pad being electrically connected to a ground bus line of the second semiconductor chip.

12. A semiconductor device including a first semiconductor chip having a first side and a second side orthogonal to the first side on a surface and a second semiconductor chip on one mounting substrate, wherein

the first semiconductor chip has an outermost pair of a power supply bus line and a ground bus line extending generally parallel to the first side or the second side on the surface, and an first protection electrode pad provided in a circumference corner region on the surface and electrically connected to the ground bus line,

the circumference corner region being included in an overlap of a circumference region and a corner region on the surface,

the circumference region being between (a) an outside bus line of the outermost pair of the power supply bus line and the ground bus line, and (b) the first and second sides, and

the corner region being outside of both a first parallel line paralleling the first side a first distance distal from the first side and a second parallel line paralleling the second side a second distance distal from the second side,

the first distance being a distance between the first side and a portion of an inside bus line of the outermost pair of the power supply bus line and the ground bus line, the portion paralleling the first side, and

the second distance being a distance between the second side and a portion of the inside bus line, the portion paralleling the second side, and

the first protection electrode pad being electrically connected to a ground bus line of the second semiconductor chip.

13. The semiconductor device according to claim 12 , further comprising a first electrostatic discharge protection circuit electrically connected between the first protection electrode pad and the ground bus line in the corner region.

14. The semiconductor device according to claim 13 , further comprising a second electrode pad electrically connected to the first electrostatic discharge protection circuit and the ground bus line in a circumference non-corner region, the circumference non-corner region being a region included by the circumference region and not included by the corner region.

15. The semiconductor device according to claim 14 , wherein a plurality of electrode pads including the second electrode pad arc provided in the circumference non-corner region, the second electrode pad being disposed at the closest position to the first electrostatic discharge protection circuit among the plurality of electrode pads.

16. The semiconductor device according to claim 15 , wherein the first protection electrode pad, the first electrostatic discharge protection circuit and the second electrode pad are continuously disposed along the first side or the second side.

17. The semiconductor device according to claim 16 , further comprising a second electrostatic discharge protection circuit electrically connected between the first protection electrode pad and the power supply bus line in the corner region.