IP Library Granted Patent US 8,131,120
Granted Patent B2
US 8,131,120 · App. 12/194,352 · Granted Mar 6, 2012

Planar polarization splitter

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Quick Facts
Patent No.
US 8,131,120
App. No.
12/194,352
Granted
Mar 6, 2012
Kind
B2
Abstract

An apparatus comprising a planar optical structure that includes an input coupler, first and second planar waveguides and an output coupler, all on a planar substrate. The input coupler is configured to divide an incoming light into two input light beams. Each of the first and second waveguides is configured to receive one of the two input light beams. The first waveguide has a first core with a width that is greater than a width of a second core of the second waveguide. At least one of the first or second planar waveguides is birefringent. The output coupler is configured to receive the light beams after passage through the first and second waveguides. A first output light beam from the output coupler is substantially TE polarized light and a second output light beam from the output coupler is substantially TM polarized light.

Claims (32)

1. An apparatus, comprising:

a planar optical structure, including:

an input coupler on a planar substrate, said input coupler configured to divide an incoming light into two light beams;

first and second planar waveguides on said planar substrate, each of said first and second waveguides being configured to receive one of said two light beams, wherein said first waveguide has a single layer first core with a width that is greater than a width of a single layer second core of said second waveguide, and, at least one of said first or second planar waveguides is birefringent; and

an output coupler on said planar substrate, said output coupler configured to receive said light beams after passage through said first and second waveguides, wherein a first output light beam from said output coupler is substantially transverse electric polarized light and a second output light beam from said output coupler is substantially transverse magnetic polarized light,

wherein said first and second cores have vertical thicknesses that are less than said first core width and said second core width.

2. The apparatus of claim 1 , wherein said planar optical structure is configured to be one selected from the group consisting of: a planar polarization splitter, planar polarization combiner and a planar polarizer.

3. The apparatus of claim 1 , wherein said first and second cores are layers that have vertical thicknesses in a range from about 0.1 to 0.2 microns and said first core width is in a range of about 3.0 to 4.5 microns and said second core width is in a range of about 1.0 to 2.5 microns.

4. The apparatus of claim 1 , wherein said first and second cores both comprise layers of a same semiconductor alloy.

5. The apparatus of claim 1 , wherein said first and second cores are both composed of indium gallium arsenide phosphide and said substrate is composed of indium phosphide.

6. The apparatus of claim 1 , wherein said first and second cores are composed of a first semiconductor alloy having a first refractive index, and, said first and second waveguides are located on said substrate comprising a second semiconductor alloy cladding, said second semiconductor alloy cladding having a lower refractive index with respect to said incoming light than said first alloy.

7. The apparatus of claim 3 , wherein sidewalls of said waveguide cores are adjacent to a cladding material, wherein a ratio of a refractive index of said first and second waveguides to a refractive index of said adjacent cladding material is about 1.5 or greater.

8. The apparatus of claim 3 , wherein said first and second waveguides have substantially the same length.

9. The apparatus of claim 3 , wherein said input coupler is a 1-by-2 coupler and said output coupler is a 2-by-2 interference coupler.

10. The apparatus of claim 3 , wherein both of said first and second planar waveguides are birefringent.

11. The apparatus of claim 3 , wherein said planar optical structure configured as a planar polarization splitter is configured to polarization separate said incoming light in a C-band wavelength range.

12. The apparatus of claim 1 , wherein said first and second cores have vertical thicknesses that are less than 0.28 microns.

13. The apparatus of claim 1 , wherein a length of said first and second planar waveguides is less than about 500 microns.

14. An apparatus, comprising:

a planar optical structure, including:

an input coupler on a planar substrate, said input coupler configured to divide an incoming light into two light beams;

first and second planar waveguides on said planar substrate, each of said first and second waveguides being configured to receive one of said two light beams, wherein said first waveguide has a single layer first core with a width that is greater than a width of a single layer second core of said second waveguide, and, at least one of said first or second planar waveguides is birefringent; and

an output coupler on said planar substrate, said output coupler configured to receive said light beams after passage through said first and second waveguides, wherein a first output light beam from said output coupler is substantially transverse electric polarized light and a second output light beam from said output coupler is substantially transverse magnetic polarized light,

wherein said first and second waveguide cores are located in-between raised portions of said substrate located below said first and second waveguide cores, and material layers, which are located on said first and second waveguide cores said raised portions and material layer serving as lower and upper cladding layers, respectively.

15. A method of manufacture, comprising:

fabricating a planar optical structure, including:

forming a semiconductor alloy layer on a planar substrate;

forming a material layer on said semiconductor alloy layer, wherein said material layer and said substrate have refractive indexes that are less than a refractive index of said semiconductor alloy layer; and

patterning said material layer and said semiconductor alloy layer to form separated first and second waveguides, wherein a width of a single layer first core composed of said semiconductor alloy layer of said first waveguide is greater than a width of a single layer second core composed of said semiconductor alloy layer of said second waveguide, and, at least one of said first or second planar waveguides is birefringent, wherein said patterning further includes removing portions of said substrate not covered by said first and second cores to form raised portions that said first and second cores are located on, wherein a ratio of refractive indexes of said first and said second cores to both of said raised portions and said material layers is about 1.5 or greater.

16. The method of claim 15 , wherein forming said structure further includes depositing a planarizing layer over said material layer and first and second cores such that an upper surface of said polarization structure is planar.

17. The method of claim 15 , wherein forming said structure further including forming a 1-by-2 input coupler and a 2-by-2 output coupler on said planar substrate such that one end of said 1-by-2 input coupler is optically connected to input ends of said first and second waveguides, and one end of said 2-by-2 coupler is optically connected to output ends said first and second waveguides.

18. The method of claim 15 , wherein forming said polarization structure is part of forming a photonic integrated circuit.

Assignments (11)
PATENT SECURITY AGREEMENT Recorded Apr 22, 2023
From: RPX CORPORATION
To: BARINGS FINANCE LLC, AS COLLATERAL AGENT
Reel/Frame 063429/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 28, 2021
From: PROVENANCE ASSET GROUP LLC
To: RPX CORPORATION
Reel/Frame 059352/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 30, 2021
From: NOKIA US HOLDINGS INC.
To: PROVENANCE ASSET GROUP HOLDINGS LLC; PROVENANCE ASSET GROUP LLC
Reel/Frame 058363/0723 →
RELEASE OF SECURITY INTEREST Recorded Nov 30, 2021
From: CORTLAND CAPITAL MARKETS SERVICES LLC
To: PROVENANCE ASSET GROUP HOLDINGS LLC; PROVENANCE ASSET GROUP LLC
Reel/Frame 058983/0104 →
ASSIGNMENT AND ASSUMPTION AGREEMENT Recorded Feb 14, 2019
From: NOKIA USA INC.
To: NOKIA US HOLDINGS INC.
Reel/Frame 048370/0682 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 13, 2017
From: NOKIA TECHNOLOGIES OY; NOKIA SOLUTIONS AND NETWORKS BV; ALCATEL LUCENT SAS
To: PROVENANCE ASSET GROUP LLC
Reel/Frame 043877/0001 →
SECURITY INTEREST Recorded Sep 13, 2017
From: PROVENANCE ASSET GROUP HOLDINGS, LLC; PROVENANCE ASSET GROUP LLC
To: NOKIA USA INC.
Reel/Frame 043879/0001 →
SECURITY INTEREST Recorded Sep 13, 2017
From: PROVENANCE ASSET GROUP HOLDINGS, LLC; PROVENANCE ASSET GROUP, LLC
To: CORTLAND CAPITAL MARKET SERVICES, LLC
Reel/Frame 043967/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 19, 2011
From: ALCATEL-LUCENT USA INC.
To: ALCATEL LUCENT
Reel/Frame 027408/0535 →
MERGER Recorded Dec 13, 2011
From: LUCENT TECHNOLOGIES INC.
To: ALCATEL-LUCENT USA INC.
Reel/Frame 027377/0578 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 2, 2008
From: DOERR, CHRISTOPHER RICHARD
To: LUCENT TECHNOLOGIES INC.
Reel/Frame 021469/0247 →