Switching assembly for an aircraft ignition system

1. A switching assembly for a high voltage aircraft ignition system, said switching assembly comprising:

a substrate;

an anode pad;

a semiconductor device connected to said anode pad and being supported by said substrate, said semiconductor device having one or more high voltage gates and one or more high voltage cathodes;

at least one gate pad disposed on a surface of said semiconductor device for electrical interconnection to said gate(s) of said semiconductor device;

at least one cathode pad on the surface of said semiconductor device for electrical connection to said cathode(s) of said semiconductor device;

a plurality of leads including a first lead electrically connected directly to said gate pad at said surface of said semiconductor device, a second lead electrically connected directly to said cathode pad at said surface of said semiconductor device, and a third lead electrically connected to said anode pad; and

potting covering said gate, cathode, and anode pads and covering a portion of said leads, such that said leads extend out of said potting to an exposed location for external connections to said switching assembly.

2. A switching assembly as set forth in claim 1 , wherein said at least one cathode pad comprises a pair of cathode pads both directly connected to said second lead, and wherein said gate pad comprises a single gate pad positioned on said semiconductor device between said pair of gate pads.

3. A switching assembly as set forth in claim 2 , wherein said anode pad is located at a bottom side of said semiconductor device, said gate and cathode pads are located at a top side of said semiconductor device, and said leads extend upwardly above and away from said top side.

4. A switching assembly as set forth in claim 1 , wherein said semiconductor device comprises a switch die that includes said semiconductor device having said anode pad bonded to a backside of the semiconductor device, and having a ceramic cap mounted on top of said semiconductor device, wherein said gate pad and cathode pad are mounted on top of said ceramic cap such that said ceramic cap is positioned between said semiconductor device and said gate and cathode pads.

5. A switching assembly as set forth in claim 4 , wherein said cathode pad is a first cathode pad, and wherein said ceramic cap further includes a second cathode pad.

6. A switching assembly as set forth in claim 4 further comprising welding points extending through said ceramic cap from said cathode(s) to said cathode pad.

7. A switching assembly as set forth in claim 1 , wherein said substrate is a ceramic substrate having an electrical pad on a top surface of said substrate, and wherein said anode pad is bonded to said semiconductor device and soldered to said electrical pad, and wherein said third lead is soldered to said electrical pad.

8. A switching assembly for a high voltage aircraft ignition system, said switching assembly comprising:

a ceramic substrate;

an anode pad bonded to said ceramic substrate;

a switch die having a semiconductor frame that includes a plurality of gates and a plurality of cathodes;

a gate pad disposed on a surface of said switch die and electrically connected to said plurality of gates;

a cathode pad disposed on a surface of said switch die and electrically connected to said plurality of cathodes; and

a lead frame comprising a plurality of externally exposed leads including a first lead soldered to said gate pad at said surface of said switch die, a second lead soldered to said cathode pad at said surface of said switch die, and a third lead connected to said anode pad to facilitate electrical connection of said switching assembly with the high voltage aircraft ignition system.

9. A switching assembly as set forth in claim 8 , wherein said plurality of gates are secured within said switch die.

10. A switching assembly as set forth in claim 9 , wherein said plurality of cathodes are secured within said switch die.

11. A switching assembly as set forth in claim 10 , wherein each of said plurality of cathodes is disposed adjacent two of said plurality of gates.

12. A switching assembly as set forth in claim 11 , wherein said gates extend in a direction parallel to said cathodes.

13. A switching assembly as set forth in claim 12 , wherein said gate pad and said cathode pad extend in a direction perpendicular to said plurality of gates and said plurality of cathodes.

14. A switching assembly as set forth in claim 8 , wherein said switch die further comprises a ceramic cap attached to said semiconductor frame above said plurality of gates and cathodes, and wherein said gate pad and said cathode pad are attached to a top surface of said ceramic cap and are connected with the respective gates and cathodes, respectively.