Method and apparatus for affecting surface composition of CIGS absorbers formed by two-stage process
View Patent ↗A method and system to modify a surface composition of thin film Group IBIIIA VIA solar cell absorbers having non-uniformly distributed Group IIIA materials or graded materials, such as Indium (In), gallium (Ga) and aluminum (Al). The graded materials distribution varies between the surface and the bottom of the absorber layer such that a molar ratio of (Ga+Al)/(Ga+Al+In) is the highest at the bottom of the absorber layer and the lowest at the surface of the absorber. Within the bulk of the absorber, the molar ratio gradually changes between the bottom and the surface of the absorber. In one embodiment, the surface composition of a graded absorber layer may be modified by removing a top portion or slice of the absorber layer, where the molar ratio is low so as to expose the inner portions of the absorber layer having a higher molar ratio of graded materials.
1. A method of forming solar cell absorbers on a surface of a base, comprising:
forming a precursor layer on the surface of the base, the precursor layer comprising at least one Group IB material, a first Group IIIA material and a second Group IIIA material;
reacting the precursor layer with a Group VIA material to form a Group IBIIIAVIA absorber layer with a first thickness having a front surface and a back surface adjacent the surface of the base, wherein the step of reacting non-uniformly distributes the second Group IIIA material within the Group IBIIIAVIA absorber layer so that a molar ratio of the second Group IIIA material to a total of the first Group IIIA material and the second Group IIIA material is less than 0.1 at the front surface and greater than 0.5 at the back surface; and
applying a material removal process to the front surface of the Group IBIIIAVIA absorber layer, thus forming a modified front surface while reducing the thickness of the absorber layer to a second thickness, wherein the molar ratio of the second Group IIIA material to the total of the first Group IIIA material and the second Group IIIA material is in the range of 0.15-0.3 at the modified front surface.
2. The method of claim 1 , wherein the first thickness is in the range of 1000-3000 nm, and the second thickness is in the range of 700-2500 nm.
3. The method of claim 1 , wherein the Group IB material comprises at least one of copper and silver.
4. The method of claim 3 , wherein the first Group IIIA material comprises indium and the second Group IIIA material comprises at least one of gallium and aluminum.
5. The method of claim 4 , wherein the Group VIA material comprises selenium.
6. The method of claim 5 , wherein the Group VIA material further comprises sulfur.
7. The method of claim 4 wherein the step of reacting comprises the steps of depositing a layer of Group VIA material over the precursor layer thus forming a stack and raising the temperature of the stack to a temperature range of 400-600° C.
8. The method of claim 1 , wherein the step of applying the material removal process further comprises analyzing the absorber layer while the thickness of the absorber layer is reduced.