IP Library Granted Patent US 7,804,361
Granted Patent B2
US 7,804,361 · App. 12/195,615 · Granted Sep 28, 2010

Low noise amplifier

Assignee: Samsung Electronics, Co., Ltd.
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Quick Facts
Patent No.
US 7,804,361
App. No.
12/195,615
Granted
Sep 28, 2010
Kind
B2
Abstract

A low noise amplifier is provided. The low noise amplifier includes: a low noise amplifying unit amplifying an input signal; a harmonic and noise generating unit disposed in an input terminal of the low noise amplifying unit, for generating a compensating signal for compensating for an intermodulation distortion signal and a thermal noise signal of the input signal to the low noise amplifying unit; and a load unit outputting the amplified input signal generated by the low noise amplifying unit.

Claims (38)

1. A low noise amplifier, comprising:

a low noise amplifying unit amplifying an input signal;

a harmonic and noise generating unit disposed in an input terminal of the low noise amplifying unit, and generating a compensating signal for compensating for at least one of an intermodulation distortion signal and a thermal noise signal of the low noise amplifying unit; and

a load unit outputting the amplified input signal generated by the low noise amplifying unit,

wherein the load unit comprises a resistor and an inductor connected in series to the resistor, the load unit outputting a signal at an output node between the resistor and the inductor.

2. The low noise amplifier of claim 1 , wherein the harmonic and noise amplifying unit and the low noise amplifying unit are connected in series to each other.

3. The low noise amplifier of claim 1 , wherein the harmonic and noise generating unit generates an intermodulation distortion compensation signal phase-shifted by 180° from the intermodulation distortion signal generated by the low noise amplifying unit.

4. The low noise amplifier of claim 1 , wherein the harmonic and noise generating unit generates a thermal noise compensation signal phase-shifted by 180° from that of a thermal noise signal generated by the low noise amplifying unit.

5. The low noise amplifier of claim 1 , wherein the low noise amplifying unit is a common gate differential amplifier including at least one field effect transistor (FET).

6. The low noise amplifier of claim 1 , wherein the harmonic and noise generating unit is a common source differential amplifier including at least one field effect transistor (FET), the harmonic and noise generating unit and the low noise amplifying unit receiving the same input signal, and

wherein a drain of the at least one FET is connected to a gate of another FET which receives a first input signal different from a second input signal received by the at least one FET, the at least one FET being connected in series to the input terminal of the low noise amplifying unit.

7. The low noise amplifier of claim 1 , wherein the low noise amplifying unit comprise a common gate differential amplifier, and

wherein the harmonic and noise generating unit comprises a common source differential amplifier.

8. A low noise amplifier, comprising:

a low noise amplifying unit amplifying an input signal;

a harmonic and noise generating unit disposed in an input terminal of the low noise amplifying unit, and generating a compensating signal for compensating for at least one of an intermodulation distortion signal and a thermal noise signal of the input signal input to, the low noise amplifying unit; and

a load unit outputting the amplified input signal generated by the low noise amplifying unit,

wherein the harmonic and noise generating unit generates an intermodulation distortion compensation signal phase-shifted by 180° from the intermodulation distortion signal generated by the low noise amplifying unit.

9. The low noise amplifier of claim 8 , wherein the harmonic and noise amplifying unit and the low noise amplifying unit are connected in series to each other.

10. The low noise amplifier of claim 8 , wherein the low noise amplifying unit is a common gate differential amplifier including at least one field effect transistor (FET).

11. The low noise amplifier of claim 8 , wherein the harmonic and noise generating unit is a common source differential amplifier including at least one field effect transistor (FET), the harmonic and noise generating unit and the low noise amplifying unit receiving the same input signal, and

wherein a drain of the at least one FET is connected to a gate of another FET which receives a first input signal different from a second input signal of the at least one FET, the at least one FET being connected in series to the input terminal of the low noise amplifying unit.

12. The low noise amplifier of claim 8 , wherein the load unit comprises a resistor and an inductor connected in series to the resistor, the load unit outputting a signal generated between the resistor and the inductor.

13. The low noise amplifier of claim 8 , wherein the low noise amplifying unit comprise a common gate differential amplifier, and

wherein the harmonic and noise generating unit comprises a common source differential amplifier.

14. The low noise amplifier of claim 8 , wherein the harmonic and noise generating unit further generates a thermal noise compensation signal phase-shifted by 180° from that of a thermal noise signal generated by the low noise amplifying unit.

15. A low noise amplifier, comprising:

a low noise amplifying unit amplifying an input signal;

a harmonic and noise generating unit disposed in an input terminal of the low noise amplifying unit, and generating a compensating signal for compensating for at least one of an intermodulation distortion signal and a thermal noise signal of the input signal input to the low noise amplifying unit; and

a load unit outputting the amplified input signal generated by the low noise amplifying unit,

wherein the harmonic and noise generating unit generates a thermal noise compensation signal phase-shifted by 180° from that of a thermal noise signal generated by the low noise amplifying unit.

16. The low noise amplifier of claim 15 , wherein the harmonic and noise amplifying unit and the low noise amplifying unit are connected in series to each other.

17. The low noise amplifier of claim 15 , wherein the low noise amplifying unit is a common gate differential amplifier including at least one field effect transistor (FET).

18. The low noise amplifier of claim 15 , wherein the harmonic and noise generating unit is a common source differential amplifier including at least one field effect transistor (FET), the harmonic and noise generating unit and the low noise amplifying unit receiving the same input signal, and

wherein a drain of the at least one FET is connected to a gate of another FET which receives a first input signal different from a. second input signal of the at least one FET, the at least one FET being connected in series to the input terminal of the low noise amplifying unit.

19. The low noise amplifier of claim 15 , wherein the load unit comprises a resistor and an inductor connected in series to the resistor, the load unit outputting a signal generated between the resistor and the inductor.

20. The low noise amplifier of claim 15 , wherein the low noise amplifying unit comprise a common gate differential amplifier, and

wherein the harmonic and noise generating unit comprises a common source differential amplifier.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 21, 2008
From: LIM, HYUNG-SUN; PARK, JIN-SOO; LEE, HEUNG-BAE; KIM, YOUNG-EIL; JEON, SANG-YOON; KWON, ICK-JIN; KIM, BUM-MAN; YOON, JE-HYUNG
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 021422/0869 →
Priority Claims (1)
KR 10-2008-0016496 · Feb 22, 2008 · national
Continuity (1)
Related Publication 20090212861A1 · Aug 27, 2009