Method of assembling an insulated metal substrate
View Patent ↗An insulated metal substrate laminate includes a metal substrate, a dielectric layer disposed upon the metal substrate, wherein the dielectric layer comprises a thermoplastic film having a thickness of less than or equal to 10 micrometers, a thermal resistance of less than or equal to 0.050 Kelvin-square inches per watt, and a breakdown voltage greater than or equal to 1000 volts (alternating current), and an electrically conductive layer disposed upon the dielectric layer.
1. A method of assembling an insulated metal substrate laminate, comprising:
placing a dielectric layer upon a metal substrate, wherein the dielectric layer comprises a thermoplastic film having a thickness of less than or equal to 10 micrometers, a thermal resistance of less than or equal to 0.050 Kelvin-square inches per watt, and a breakdown voltage greater than or equal to 1000 volts (alternating current);
placing an electrically conductive layer upon the dielectric layer; and
laminating the electrically conductive layer, the dielectric layer, and the metal substrate together by applying a pressure of at least about 300 pounds per square inch at a temperature of at least about 460 degrees Fahrenheit for at least about 10 minutes to form the insulated metal substrate laminate.
2. The method of claim 1 , further comprising soldering an electrical component to the electrically conductive layer of the insulated metal substrate laminate.
3. The method of claim 1 , wherein the electrically conductive layer comprises copper, tin-plated copper, silver, gold, or a combination comprising at least one of the foregoing.
4. The method of claim 1 , wherein the thermoplastic film comprises a polyether ether ketone.
5. The insulated metal substrate laminate of claim 4 , wherein the dielectric layer is free of halogens.
6. The method of claim 1 , wherein the metal substrate comprises aluminum, copper, tin-plated copper, copper-beryllium, stainless steel, or a combination comprising at least one of the foregoing.
7. A method of assembling an insulated metal substrate laminate, comprising:
placing a dielectric layer upon a metal substrate sheet, wherein the dielectric layer comprises a thermoplastic film having a thickness of less than or equal to 10 micrometers, a thermal resistance of less than or equal to 0.050 Kelvin-square inches per watt, and a breakdown voltage greater than or equal to 1000 volts (alternating current);
placing an electrically conductive foil upon the dielectric layer; and
feeding the electrically conductive foil, the dielectric layer, and the metal substrate sheet between two or more rolls and laminating the electrically conductive layer, the dielectric layer, and the metal substrate together by applying a pressure of at least about 300 pounds per square inch at a temperature of at least about 460 degrees Fahrenheit for at least about 10 minutes to form the insulated metal substrate laminate.
8. The method of claim 7 , wherein the feeding and the laminating are continuously done to form a plurality of insulated metal substrates.
9. The method of claim 7 , further comprising soldering an electrical component to the electrically conductive layer of the insulated metal substrate laminate.
10. The method of claim 7 , wherein the electrically conductive layer comprises copper, tin-plated copper, silver, gold, or a combination comprising at least one of the foregoing.
11. The method of claim 7 , wherein the thermoplastic film comprises a polyether ether ketone.
12. The method of claim 11 , wherein the polyether ether ketone has a film thickness of about 6 micrometers.
13. The method of claim 11 , wherein the dielectric layer is free of halogens.
14. The method of claim 7 , wherein the metal substrate comprises aluminum, copper, tin-plated copper, copper-beryllium, stainless steel, or a combination comprising at least one of the foregoing.