IP Library Granted Patent US 7,553,701
Granted Patent B2
US 7,553,701 · App. 12/195,991 · Granted Jun 30, 2009

Semiconductor packaging method

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Quick Facts
Patent No.
US 7,553,701
App. No.
12/195,991
Granted
Jun 30, 2009
Kind
B2
Abstract

The present invention relates to a semiconductor packaging method. The method comprises (S 1 ) applying a die adhesive to an upper surface of a member through screen-printing; (S 2 ) B-stage curing the member having the die adhesive; (S 3 ) attaching a die on the B-stage cured die adhesive; (S 4 ) wire-bonding the die to the member; and (S 5 ) encapsulating the outside of the resultant, after the B-stage curing process of the step S 2 , a degree of cure of the die adhesive shows a decrease in heat capacity by 80 to 100%, and the step S 3 is performed such that the die adhesive maintains an adhesive strength of 10 kgf/cm 2 or more at normal temperature after the die attaching.

Claims (14)

1. A semiconductor packaging method, comprising:

(S 1 ) applying a die adhesive to an upper surface of a member through screen-printing;

(S 2 ) B-stage curing the member having the die adhesive;

(S 3 ) attaching a die on the B-stage cured die adhesive;

(S 4 ) wire-bonding the die to the member; and

(S 5 ) encapsulating the outside of the resultant,

wherein after the B-stage curing process of the step S 2 , a degree of cure of the die adhesive shows a decrease in heat capacity by 80 to 100%, and

wherein the step S 3 is performed such that the die adhesive maintains an adhesive strength of 10 kgf/cm 2 or more at normal temperature after the die attaching.

2. The semiconductor packaging method according to claim 1 ,

wherein in the case that the die adhesive after the step S 2 is left for 1 day or more under conditions of 85° C. temperature and 85% humidity, the die adhesive has a moisture absorption rate of 0.5% or less.

3. The semiconductor packaging method according to claim 1 or 2 ,

wherein the die attaching process of the step S 3 is performed such that an attached area of the die to the die adhesive is 50 to 100% based on the entire area of the applied die adhesive.

4. The semiconductor packaging method according to claim 1 or 2 ,

wherein the die adhesive has a glass transition temperature (Tg) of 50 to 100° C.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 11, 2014
From: LG INNOTEK CO. LTD.
To: H&S HIGH TECH CORP.
Reel/Frame 033082/0075 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 29, 2010
From: LS MITRON LTD.
To: LG INNOTEK CO., LTD.
Reel/Frame 024151/0079 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 21, 2008
From: SEO, JOON-MO; KANG, BYOUNG-UN; KIM, JAE-HUN; HYUN, SOON-YOUNG; KIM, JI-EUN; LEE, JUN-WOO; KIM, JU-HYUK
To: LS MTRON LTD.
Reel/Frame 021425/0300 →