Inkjet nozzle arrangement having a nozzle rim to facilitate ink drop misdirection
View Patent ↗Provided is an inkjet nozzle arrangement for an inkjet printhead. The arrangement includes a wafer substrate defining sidewalls and a roof portion to form an ink chamber, the roof portion further defining a nozzle aperture, as well as a heater element suspended inside the ink chamber for thermal expansion and subsequent ejection of ink from the chamber via the nozzle aperture. The arrangement also includes a nozzle rim defined about the aperture on the roof portion, said rim having an inner and an outer lip to facilitate ink drop misdirection during ink ejection to minimise cavitation corrosion of the heater element.
1. An inkjet nozzle arrangement for an inkjet printhead, said arrangement comprising:
a wafer substrate defining sidewalls and a roof portion to form an ink chamber, the roof portion further defining a nozzle aperture;
a bar heater element suspended inside the ink chamber for thermal expansion and subsequent ejection of ink from the chamber via the nozzle aperture; and
a nozzle rim defined about the aperture on the roof portion, wherein the heater element has a latch point for locating a base of a droplet ejected from the nozzle aperture, said latch point being defined by a surface irregularity in the bar heater element.
2. The nozzle arrangement of claim 1 , wherein the wafer substrate is a silicon wafer substrate.
3. The nozzle arrangement of claim 1 , wherein the wafer substrate includes a CMOS circuitry layer for electrically actuating the heater element.
4. The nozzle arrangement of claim 1 , having an ink droplet stem anchor defined on the roof portion to facilitate ink ejection.
5. The nozzle arrangement of claim 1 , wherein the nozzle aperture is oval shaped.
6. The nozzle arrangement of claim 1 , wherein the heater element has a tapered section where electrical resistance is at a maximum such that ink vapour bubbles initiate at the maximum resistance section.
7. The nozzle arrangement of claim 6 , wherein the heater element is formed from TiAlN.