Organic light-emitting display device and method of manufacturing the same
View Patent ↗An organic light-emitting display device includes a thin film transistor on a substrate, a protective layer and a planarization layer covering the thin film transistor, a pixel electrode connected to the thin film transistor, and a wall positioned on at least a portion of the pixel electrode. The planarization layer includes an aperture which exposes a portion of the pixel electrode. An organic layer is formed on the pixel electrode, and a common electrode is formed on the organic layer. An auxiliary electrode layer is formed to overlap the wall on the common electrode.
1. An organic light-emitting display device, comprising:
a substrate;
a thin film transistor formed on the substrate;
a planarization layer on the thin film transistor;
a pixel electrode connected to the thin film transistor;
a wall on the pixel electrode and the planarization layer, the wall including an aperture exposing a portion of the pixel electrode;
an organic layer on the pixel electrode;
a common electrode on the organic layer; and
an auxiliary electrode layer positioned on the common electrode, the auxiliary electrode layer positioned overlapping the wall,
wherein the auxiliary electrode includes a first auxiliary electrode layer extended in a first direction and a second auxiliary electrode layer extended in a second direction perpendicular to the first direction in a plan view, and wherein the auxiliary electrode layer comprises a first metallic layer, a metallic oxide layer formed on the first metallic layer, and a second metallic layer formed on the metallic oxide layer.
2. The organic light-emitting display device of claim 1 , wherein the organic layer comprises:
a hole injection layer formed on the pixel electrode;
a hole transport layer formed on the hole injection layer;
an organic light-emitting layer formed on the hole transport layer overlapping the pixel electrode;
an electron transport layer formed on the organic light-emitting layer; and
an electron injection layer formed on the electron transport layer.
3. The organic light-emitting display device of claim 1 , wherein the first metallic layer comprises at least one selected from the group consisting of aluminum (Al), silver (Ag), cupper (Cu), gold (Au), iron (Fe), indium (In), neodymium (Nd), nickel (Ni), and palladium (Pd) or an alloy thereof.
4. The organic light-emitting display device of claim 1 , wherein the metallic oxide layer comprises at least one selected from the group consisting of silicon oxide (SiO, SiO2), barium oxide (BaO), aluminum oxide (Al2O3), germanium oxide (GeO2), magnesium oxide (MgO), neodymium oxide (Nd2O3), tin oxide (SnO2), titanium oxide (TiO2), and tungsten oxide (WO3).
5. The organic light-emitting display device of claim 1 , wherein the second metallic layer comprises at least one selected from the group consisting of aluminum (Al), silver (Ag), cupper (Cu), gold (Au), iron (Fe), indium (In), neodymium (Nd), nickel (Ni), and palladium (Pd) or an alloy thereof.
6. The organic light-emitting display device of claim 1 , wherein the pixel electrode comprises a reflective conductive material.
7. The organic light-emitting display device of claim 6 , wherein the reflective conductive material comprises at least one selected from the group consisting of aluminum (Al), magnesium (Mg), silver (Ag), mercury (Hg), and calcium (Ca).
8. The organic light-emitting display device of claim 1 , wherein the common electrode comprises a transparent conductive material.
9. The organic light-emitting display device of claim 8 , wherein the transparent conductive material comprises at least one selected from the group consisting of indium tin oxide (ITO), tin oxide (TO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO).
10. The organic light-emitting display device of claim 1 , further comprising a color filter positioned on the common electrode and overlapping the pixel electrode.
11. The organic light-emitting display device of claim 1 , further comprising a protective layer interposed between the planarization layer and the thin film transistor.