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Patent Application
App. No. 12/197,457

INERT GAS ETCHING

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Quick Facts
Patent No.
US None
App. No.
12/197,457
Abstract

A method of patterning a nanostructure film using a plasma is described. The nanostructure film may substantially comprise carbon and/or carbon nanotubes. The plasma may comprise an inert gas. The plasma may be applied to the nanostructure film at close to atmospheric pressure and room temperature.

Claims (20)

1 . A method of patterning a nanostructure film on a substrate, comprising applying a plasma to the nanostructure film, such that the plasma removes a select portion of the nanostructure film from the substrate.

2 . The method of claim 1 , wherein the nanostructure film substantially comprises carbon nanotubes.

3 . The method of claim 2 , wherein the plasma comprises an inert gas.

4 . The method of claim 3 , wherein the inert gas etches the nanostructure film.

5 . The method of claim 4 , wherein the inert gas is at least one of He, Ne, Ar and Kr and Xe.

6 . The method of claim 1 , wherein the nanostructure film substantially comprises carbon.

7 . The method of claim 6 , wherein the plasma consists of an inert gas.

8 . The method of claim 7 , wherein the inert gas is at least one of He, Ne, Ar and Kr and Xe.

9 . The method of claim 8 , wherein the nanostructure film comprises carbon nanotubes.

10 . The method of claim 1 , wherein the plasma consists of an inert gas.

11 . The method of claim 1 , wherein the nanostructure film substantially comprises carbon.

12 . The method of claim 11 , wherein the plasma is applied to the nanostructure film at atmospheric pressure.

13 . The method of claim 12 , wherein the plasma is applied to the nanostructure-film at near room temperature.

14 . The method of claim 13 , wherein the plasma comprises oxygen.

15 . The method of claim 14 , wherein the nanostructure film comprises carbon nanotubes.

16 . A method of patterning a carbon nanotube film, comprising applying a plasma to the carbon nanotube film, wherein the plasma removes a portion of the carbon nanotube film.

17 . The method of claim 16 , wherein the plasma is applied to the film at room temperature.

18 . The method of claim 17 , wherein the plasma is applied to the film at atmospheric pressure.

19 . The method of claim 16 , wherein the plasma consists of an inert gas.

20 . The method of claim 19 , wherein the inert gas is Ar.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 28, 2011
From: UNIDYM, INC.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 025875/0331 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 25, 2008
From: HU, LIANGBING, DR.; PARK, YOUNGBAE, DR.
To: UNIDYM, INC.
Reel/Frame 021435/0366 →