Thin film transistor substrate, display device having the same and method of manufacturing the display device
View Patent ↗A thin film transistor substrate includes an insulating plate; a gate electrode disposed on the insulating plate; a semiconductor layer comprising a metal oxide, wherein the metal oxide has oxygen defects of less than or equal to 3%, and wherein the metal oxide comprises about 0.01 mole/cm 3 to about 0.3 mole/cm 3 of a 3d transition metal; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and a source electrode and a drain electrode disposed on the semiconductor layer. Also described is a display substrate. The metal oxide has oxygen defects of less than or equal to 3%, and is doped with about 0.01 mole/cm 3 to about 0.3 mole/cm 3 of 3d transition metal. The metal oxide comprises indium oxide or titanium oxide. The 3d transition metal includes at least one 3d transition metal selected from the group consisting of chromium, cobalt, nickel, iron, manganese, and mixtures thereof.
1. A thin film transistor substrate comprising:
an insulating plate;
a gate electrode disposed on the insulating plate;
a semiconductor layer comprising a metal oxide represented by In 2 O 3-x or TiO 3-y , wherein x and y independently denotes oxygen defects of 0 to 0.03, and wherein the metal oxide comprises about 0.01 mole/cm 3 to about 0.3 mole/cm 3 of a 3d transition metal;
a gate insulating layer disposed between the gate electrode and the semiconductor layer; and
a source electrode and a drain electrode disposed on the semiconductor layer.
2. The thin film transistor substrate of claim 1 , wherein the metal oxide comprises about 0.01 mole/cm 3 to about 0.2 mole/cm 3 of the 3d transition metal.
3. The thin film transistor substrate of claim 2 , wherein the 3d transition metal is disposed on the metal oxide by doping.
4. The thin film transistor substrate of claim 1 , wherein the semiconductor layer has an electrical conductivity of about 10 −4 S/cm to about 10 S/cm.
5. A display device comprising:
a first insulating plate;
a gate electrode disposed on the first insulating plate;
a semiconductor layer comprising a metal oxide represented by In 2 O 3-x or TiO 3-y , wherein x and y independently denotes oxygen defects of 0 to 0.03, and wherein the metal oxide comprises about 0.01 mole/cm 3 to about 0.3 mole/cm 3 of a 3d transition metal;
a gate insulating layer disposed between the gate electrode and the semiconductor layer;
a source electrode and a drain electrode disposed on the semiconductor layer;
a protection layer disposed on the source electrode and the drain electrode;
a pixel electrode connected to the drain electrode; and
a second insulating plate corresponding to the first insulating plate.
6. The display device of claim 5 , wherein the 3d transition metal is disposed on the metal oxide by doping.
7. The display device of claim 5 , wherein the metal oxide comprises about 0.01 mole/cm 3 to about 0.2 mole/cm 3 of the 3d transition metal.
8. The display device of claim 5 , wherein the semiconductor layer has an electrical conductivity of about 10 −4 S/cm to about 10 S/cm.
9. The display device of claim 5 , further comprising a liquid crystal layer interposed between the first insulating plate and the second insulating plate.
10. The display device of claim 5 , further comprising a common electrode disposed on the first insulating plate or the second insulating plate.