Silicon thin film anode for lithium secondary battery and preparation method thereof

1. A silicon thin film anode for a lithium secondary battery, comprising:

a collector including a metal;

an anode active material layer formed on the collector, and including a silicon;

a carbon coating layer covering the anode active material layer; and

an interface stabilizing layer formed at an interface between the metal of the collector and the silicon component of the anode active material layer,

wherein the interface stabilizing layer comprises a silicide compound.

2. The silicon thin film anode for a lithium secondary battery of claim 1 , wherein the anode active material layer is one of a silicon thin film, a silicon-metal multi-layer that a silicon thin film and a metallic thin film are sequentially laminated, a silicon-metal single layer that a silicon and a metal are simultaneously formed in one layer, and a composite layer that at least one of them is repeatedly laminated.

3. The silicon thin film anode for a lithium secondary battery of claim 2 , further comprising one or more interface stabilizing layers formed at an interface between a metallic component of the anode active material layer and a silicon component of the anode active material layer by reacting the metallic component with the silicon component in an annealing manner,

wherein the interface stabilizing layer comprises a silicide compound.

4. The silicon thin film anode for a lithium secondary battery of claim 2 , wherein one of the metal and the metallic thin film comprises at least one selected from a group consisting of titanium, nickel, copper, iron, chrome, manganese, cobalt, vanadium, tin, indium, zinc, gallium, germanium, zirconium, molybdenum, and antimony.

5. The silicon thin film anode for a lithium secondary battery of claim 1 , further comprising a metallic buffer layer interposed between the collector and the anode active material layer, and including a metal.

6. The silicon thin film anode for a lithium secondary battery of claim 5 , further comprising an interface stabilizing layer formed at an interface between a metallic component of the metallic buffer layer, and a silicon component of the anode active material layer, by reacting the metallic component with the silicon component in an annealing manner,

wherein the interface stabilizing layer comprises a silicide compound.

7. The silicon thin film anode for a lithium secondary battery of claim 5 , wherein the metal comprises at least one selected from a group consisting of titanium, nickel, copper, iron, chrome, manganese, cobalt, vanadium, tin, indium, zinc, gallium, germanium, zirconium, molybdenum, and antimony.

8. The silicon thin film anode for a lithium secondary battery of claim 1 , wherein the anode active material layer is formed to have a thickness of 10 nm˜10 μm and the carbon coating layer is formed to have a thickness of 5 nm˜200 nm.

9. The silicon thin film anode for a lithium secondary battery of claim 5 , wherein the metallic buffer layer is formed to have a thickness of 5 nm˜200 nm.

10. The silicon thin film anode for a lithium secondary battery of claim 1 , wherein the carbon coating layer does not react with an electrolyte solution due to its amorphous structure.

11. A preparation method for a silicon thin film anode for a lithium secondary battery, comprising:

preparing a collector including a metal;

forming an anode active material layer including a silicon on the collector;

forming one or more interface stabilizing layers, by annealing the collector and the anode active material layer under one of an inert atmosphere, a reduced atmosphere, and a vacuum atmosphere to react a metallic component of at least one of the collector and the anode active material layer with a silicon component of the anode active material layer at an interface therebetween; and

forming a carbon coating layer on the anode active material layer by performing an annealing process under a hydrocarbon atmosphere.

12. The method of claim 11 , further comprising forming a metallic buffer layer including a metal between the collector and the anode active material layer, before forming the anode active material layer,

wherein the interface stabilizing layer is further formed between the metallic buffer layer and the anode active material layer.

13. The method of claim 12 , wherein the metallic buffer layer is formed by an RF magnetron sputtering process utilizing a metallic target,

wherein the metallic target includes at least one selected from a group consisting of titanium, nickel, copper, iron, chrome, manganese, cobalt, vanadium, tin, indium, zinc, gallium, germanium, zirconium, molybdenum, and antimony.

14. The method of claim 11 , wherein the step of forming an anode active material layer is performed by at least one of:

a method for forming a silicon thin film by an RF magnetron sputtering process utilizing a silicon target,

a method for forming a silicon-metal multi-layer by forming a silicon thin film by an RF magnetron sputtering process utilizing a silicon target, and then by forming a metallic thin film by an RF magnetron sputtering process utilizing a metallic target, and

a method for forming a silicon-metal single layer by an RF magnetron sputtering process simultaneously utilizing a silicon target and a metallic target,

wherein the metallic target includes at least one selected from a group consisting of titanium, nickel, copper, iron, chrome, manganese, cobalt, vanadium, tin, indium, zinc, gallium, germanium, zirconium, molybdenum, and antimony.

15. The method of claim 11 , wherein the hydrocarbon is one of ethylene, propylene, butylene, methane, ethane, propane, butane, gas composed of two or more of them, and mixed gas obtained by mixing inactive gas to them.

16. The method of claim 11 , wherein the annealing process is performed for 1 minute˜24 hours at a temperature of 200° C.˜900° C.

17. A preparation method for a silicon thin film anode for a lithium secondary battery, comprising:

preparing a collector including a metal;

forming an anode active material layer including a silicon on the collector; and

simultaneously forming one or more interface stabilizing layers, and a carbon coating layer on the anode active material, by annealing the collector and the anode active material layer under a hydrocarbon atmosphere to react a metallic component of at least one of the collector and the anode active material layer with a silicon component of the anode active material layer at an interface therebetween.

18. The method of claim 17 , further comprising forming a metallic buffer layer including a metal between the collector and the anode active material layer, before forming the anode active material layer,

wherein the interface stabilizing layer is further formed between the metallic buffer layer and the anode active material layer.

19. The method of claim 17 , wherein the step of forming an anode active material layer is performed by at least one of:

a method for forming a silicon thin film by an RF magnetron sputtering process utilizing a silicon target,

a method for forming a silicon-metal multi-layer by forming a silicon thin film by an RF magnetron sputtering process utilizing a silicon target, and then by forming a metallic thin film by an RF magnetron sputtering process utilizing a metallic target, and

a method for forming a silicon-metal single layer by an RF magnetron sputtering process simultaneously utilizing a silicon target and a metallic target,

wherein the metallic target includes at least one selected from a group consisting of titanium, nickel, copper, iron, chrome, manganese, cobalt, vanadium, tin, indium, zinc, gallium, germanium, zirconium, molybdenum, and antimony.

20. The method of claim 17 , wherein the hydrocarbon is one of ethylene, propylene, butylene, methane, ethane, propane, butane, gas composed of two or more of them, and mixed gas obtained by mixing inactive gas to them.

21. The method of claim 17 , wherein the annealing process is performed for 1 minute˜24 hours at a temperature of 200° C.˜900° C.