IP Library Granted Patent US 7,814,565
Granted Patent B2
US 7,814,565 · App. 12/199,733 · Granted Oct 12, 2010

Nanostructure on a probe tip

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Quick Facts
Patent No.
US 7,814,565
App. No.
12/199,733
Granted
Oct 12, 2010
Kind
B2
Abstract

Techniques for forming a nanostructure on a probe tip are provided.

Claims (38)

1. A method for forming a nanostructure on a probe tip, comprising:

providing a substrate on which a plurality of nanostructures are formed;

contacting a probe tip with at least one of the nanostructures, the probe tip having a surface layer, wherein the probe is metal;

melting at least a portion of the surface layer to attach the at least one nanostructure to the probe tip; and

releasing the at least one nanostructure from the substrate.

2. The method of claim 1 , wherein the providing of the substrate on which the plurality of nanostructures are formed comprises:

forming catalyst particles on the substrate; and

forming the nanostructures from the catalyst particles.

3. The method of claim 2 , wherein the forming of the nanostructures from the catalyst particles comprises forming the nanostructures in a substantially vertical direction with respect to the substrate by chemical vapor deposition (CVD) or evaporation techniques in the presence of an electric field.

4. The method of claim 1 , wherein the plurality of nanostructures comprise carbon nanotubes or conductive nanowires.

5. The method of claim 1 , wherein the probe tip comprises at least one metal selected from the group consisting of tungsten, nickel, aluminum, molybdenum, tantalum and niobium.

6. The method of claim 1 , wherein the surface layer comprises a metal having a melting point lower than a melting point of the probe tip.

7. The method of claim 6 , wherein the surface layer comprises tin or zinc.

8. The method of claim 1 , further comprising forming the surface layer on the probe tip by sputtering or evaporation.

9. The method of claim 1 , wherein contacting of the probe tip with at least one of the nanostructures comprises:

moving the probe tip adjacent the substrate; and

determining whether the probe tip contacts the at least one of the nanostructures by applying a voltage between the probe tip and the plurality of nanostructures and by monitoring a current generated by contact between the probe tip and the at least one of the nanostructures.

10. The method of claim 1 , wherein melting at least a portion of the surface layer to attach the at least one nanostructure to the probe tip comprises:

applying a voltage between the probe tip and the at least one nanostructure to generate resistance heat between the surface layer and the at least one nanostructure; and

allowing the resistance heat to melt the at least a portion of the surface layer.

11. The method of claim 10 , wherein the resistance heat is generated at a contact portion of the surface layer and the at least one nanostructure.

12. The method of claim 10 , further comprising varying the voltage to adjust a bonding strength between the probe tip and the at least one nanostructure.

13. The method of claim 1 , wherein releasing the at least one nanostructure from the substrate comprises applying a physical force to the at least one nanostructure.

14. The method of claim 1 , wherein releasing the at least one nanostructure from the substrate comprises applying a voltage and/or current pulse to the at least one nano structure.

15. An apparatus comprising:

a probe tip, wherein the probe tip is metal;

a surface layer disposed on the probe tip; and

a nanostructure disposed on the probe tip,

wherein the nanostructure has been disposed on the probe tip by melting at least a portion of the surface layer adjacent the nanostructure.

16. The apparatus of claim 15 , wherein the probe tip comprises at least one metal selected from the group consisting of tungsten, nickel, aluminum, molybdenum, tantalum and niobium.

17. The apparatus of claim 15 , wherein the surface layer comprises a metal having a melting point lower than a melting point of the probe tip.

18. The apparatus of claim 17 , wherein the surface layer comprises tin or zinc.

19. The apparatus of claim 15 , wherein the nanostructure comprises a carbon nanotube or a conductive nanowire.

20. A method for forming a nanostructure on a probe tip, comprising:

providing a substrate on which a plurality of nanostructures are formed;

contacting a probe tip with at least one of the nanostructures, the probe tip having a surface layer;

melting at least a portion of the surface layer to attach the at least one nanostructure to the probe tip, wherein melting at least a portion of the surface layer to attach the at least one nanostructure to the probe tip comprises applying a voltage between the probe tip and the at least one nanostructure until a pre-determined current is obtained; and

releasing the at least one nanostructure from the substrate.

Assignments (2)
RELEASE OF SECURITY INTEREST Recorded Jul 31, 2019
From: CRESTLINE DIRECT FINANCE, L.P.
To: EMPIRE TECHNOLOGY DEVELOPMENT LLC
Reel/Frame 049924/0794 →
SECURITY INTEREST Recorded Jan 29, 2019
From: EMPIRE TECHNOLOGY DEVELOPMENT LLC
To: CRESTLINE DIRECT FINANCE, L.P.
Reel/Frame 048373/0217 →