Insulated gate bipolar transistor and method for manufacturing the same
View Patent ↗An insulated gate bipolar transistor according to an embodiment includes a first conductive type collector ion implantation area in a substrate; a second conductive type buffer layer, including a first segment buffer layer and a second segment buffer layer, on the first conductive collector ion implantation area; a first conductive type base area on the second conductive type buffer layer; a gate on the substrate at a side of the first conductive type base area; a second conductive type emitter ion implantation area in the first conductive type base area; an insulating layer on the gate; an emitter electrode electrically connected to the second conductive type emitter ion implantation area; and a collector electrode electrically connected to the first conductive collector ion implantation area. The first segment buffer layer can be aligned below a portion of the base area and can have a lower density of second conductive type ions than that of the second segment buffer layer adjacent the first segment buffer layer.
1. An insulated gate bipolar transistor comprising:
a first conductive type collector ion implantation area in a substrate;
a second conductive type buffer layer on the first conductive type collector ion implantation area, wherein the second conductive type buffer layer comprises a first segment having a first density of second conductive type ions and a second segment having a second density higher than the first density;
a drift region in the substrate on the second conductivity type buffer layer;
a first conductive type base area in the drift region;
a gate on the substrate at a side of the first conductive type base area;
a second conductive type emitter ion implantation area in the first conductive base area;
an insulating layer on the gate;
an emitter electrode electrically connected to the second conductive type emitter ion implantation area;
a collector electrode electrically connected to the first conductive type collector ion implantation area; and
a lateral insulating layer at a side of the trench, insulating the collector electrode from the second conductive type buffer layer and the drift area,
wherein the collector electrode is electrically connected to the first conductive type collector ion implantation area through a trench passing through the drift area and the second conductive type buffer layer of the substrate.
2. The insulated gate bipolar transistor according to claim 1 , further comprising a first conductive type first ion implantation area in the emitter ion implantation area.
3. The insulated gate bipolar transistor according to claim 2 , further comprising a first conductive type second ion implantation area at a lower portion of the first conductive type first ion implantation area and extending into the drift region.
4. The insulated gate bipolar transistor according to claim 3 wherein the first segment buffer layer is disposed in alignment below the first conductive type second ion implantation area; and wherein the second segment buffer layer is at a side of the first segment buffer layer.
5. The insulated gate bipolar transistor according to claim 1 , wherein the trench extends into a portion of the first conductive type collector ion implantation area.