IP Library › Granted Patent US 7,951,631
Granted Patent B2
US 7,951,631 · App. 12/200,525 · Granted May 31, 2011

Halftone mask, method of manufacturing the same, and method of manufacturing an array substrate using the same

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Quick Facts
Patent No.
US 7,951,631
App. No.
12/200,525
Granted
May 31, 2011
Kind
B2
Abstract

A halftone mask includes a transparent substrate, a light-blocking layer, a first semi-transparent layer and a second semi-transparent layer. The transparent substrate includes a light-blocking area, a light-transmitting area, a first halftone area transmitting first light, and a second halftone area transmitting second light that is less than the first light. The light-blocking layer is formed in the light-blocking area to fully block light from being transmitted. The first and second semi-transparent layers are formed on the transparent substrate. At least one of the first and second semi-transparent layers is formed in the first halftone area, and the first and second semi-transparent layers are overlapped with each other on the second halftone area.

Claims (59)

1. A method of manufacturing a halftone mask, the method comprising:

forming a first photoresist pattern on a second halftone layer and a first halftone layer that are deposited on a transparent substrate in sequence;

removing exposed portions of the first halftone layer and the second halftone layer by using the first photoresist pattern as a mask;

depositing a light-blocking layer on the whole surface of the transparent substrate;

removing the first photoresist pattern with the light-blocking layer formed on the first photoresist pattern and forming a second photoresist pattern on a portion area of the transparent substrate;

removing exposed portions of the light-blocking layer and the first halftone layer by using the second photoresist pattern as a mask; and

removing the second photoresist pattern.

2. The method of claim 1 , wherein at least one of the first and second halftone layers includes a material not having an etching selectivity with respect to the light-blocking layer, and the remaining halftone layer includes a material having an etching selectivity with respect to the light-blocking layer.

3. The method of claim 2 , wherein the light-blocking layer comprises chromium (Cr), the first halftone layer comprises chromium oxide (CrOx), and the second halftone layer comprises molybdenum-silicon (MoSi).

4. A method of manufacturing a halftone mask, the method comprising:

forming a first photoresist pattern on a light-blocking layer deposited on a transparent substrate;

removing exposed portions of the light-blocking layer by using the first photoresist pattern as a mask;

forming a first halftone layer on the whole surface of the transparent substrate and forming a second photoresist pattern on a portion area of the transparent substrate;

removing exposed portions of the first halftone layer by using the second photoresist pattern as a mask;

forming a third photoresist pattern on the portion area of the transparent substrate after removing the second photoresist pattern, and depositing a second halftone layer on a whole surface of the transparent substrate; and

removing the third photoresist pattern with a portion of the second halftone layer on the third photoresist pattern.

5. The method of claim 4 , wherein a material of the second halftone layer is substantially identical to that of the first halftone layer.

6. A method of manufacturing a halftone mask, the method comprising:

forming a first photoresist pattern on a light-blocking layer deposited on a transparent substrate;

removing exposed portions of the light-blocking layer by using the first photoresist pattern as a mask;

forming a first halftone layer on the whole surface of the transparent substrate and forming a second photoresist pattern on a portion area of the transparent substrate;

removing exposed portions of the first halftone layer by using the second photoresist pattern as a mask;

depositing a second halftone layer on a whole surface of the transparent substrate and forming a third photoresist pattern on the deposited second halftone layer;

removing the second halftone layer by using the third photoresist pattern as a mask; and

removing the third photoresist pattern through a lift-off method.

7. The method of claim 6 , wherein the first halftone layer includes a material not having an etching selectivity with respect to the light-blocking layer, and

the second halftone layer includes a material having an etching selectivity with respect to the light-blocking layer.

8. The method of claim 7 , wherein the light-blocking layer comprises chromium (Cr), the first halftone layer comprises chromium oxide (CrOx), and the second halftone layer comprises molybdenum silicon (MoSi).

9. A method of manufacturing a halftone mask, the method comprising:

forming a first photoresist pattern on a first halftone layer, a second halftone layer and a light-blocking layer which are sequentially deposited on a transparent substrate;

removing exposed portions of the light-blocking layer by using the first photoresist pattern as a mask;

forming a second photoresist pattern on a portion area of the transparent substrate;

removing the light-blocking layer by using the second photoresist pattern as a mask;

forming a third photoresist pattern on the portion area of the transparent substrate after removing the second photoresist pattern and removing the first halftone layer by using the third photoresist pattern as a mask; and

removing the third photoresist pattern.

10. The method of claim 9 , wherein the first halftone layer includes a material not having an etching selectivity with respect to the light-blocking layer, and

the second halftone layer includes a material having an etching selectivity with respect to the light-blocking layer.

11. The method of claim 10 , wherein the light-blocking layer comprises chromium (Cr), the first halftone layer comprises chromium oxide (CrOx), and the second halftone layer comprises molybdenum silicon (MoSi).

12. The method of claim 9 , wherein the second halftone layer protects the first halftone layer formed below the second halftone layer in removing the light-blocking layer.

13. A method of manufacturing a halftone mask, the method comprising:

forming a first photoresist pattern on a second halftone layer and a light-blocking layer which are sequentially deposited on a transparent substrate;

removing exposed portions of the light-blocking layer and the second halftone layer by using the first photoresist pattern as a mask;

depositing a first halftone layer on a whole surface of the transparent substrate;

forming a second photoresist pattern on a portion area of the transparent substrate;

removing a portion of the first halftone layer by using the second photoresist pattern as a mask;

removing the second photoresist pattern formed on the portion area of the transparent substrate and forming a third photoresist pattern on the portion area of the transparent substrate in which the second photoresist pattern has been removed;

removing the second halftone layer by using the third photoresist pattern as a mask; and

removing the third photoresist pattern.

14. The method of claim 13 , wherein the first halftone layer includes a material not having an etching selectivity with respect to the light-blocking layer, and the second halftone layer includes a material having an etching selectivity with respect to the light-blocking layer.

15. The method of claim 14 , wherein the light-blocking layer comprises chromium (Cr), the first halftone layer comprises chromium oxide (CrOx), and the second halftone layer comprises molybdenum silicon (MoSi).

16. A method of manufacturing a halftone mask, the method comprising:

forming a first photoresist pattern on a light-blocking layer deposited on a transparent substrate, and removing a portion of the light-blocking layer by using the first photoresist film as a mask;

depositing a second halftone layer and a first halftone layer on a whole surface of the transparent substrate, sequentially;

removing the first photoresist pattern with a portion of the first and second halftone layers formed on the first photoresist pattern and forming a second photoresist pattern on a portion area of the transparent substrate;

removing the first halftone layer and the light-blocking layer by using the second photoresist pattern as a mask; and

removing the second photoresist pattern.

17. The method of claim 16 , wherein the first halftone layer includes a material not having an etching selectivity with respect to the light-blocking layer, and

the second halftone layer includes a material having an etching selectivity with respect to the light-blocking layer.

18. The method of claim 17 , wherein the light-blocking layer comprises chromium (Cr), the first halftone layer comprises chromium oxide (CrOx), and the second halftone layer comprises molybdenum-silicon (MoSi).

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 029045/0860 →