Semiconductor light emitting device and method for manufacturing the same
Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first semiconductor layer; a light emitting structure on one sided portion of the first semiconductor layer; a protection device structure on the other sided portion of the first semiconductor layer; and a first electrode layer on the protection device structure.
1. A semiconductor light emitting device comprising:
a substrate;
an N-type first semiconductor layer on the substrate;
a light emitting structure on a first area of the N-type first semiconductor layer;
a protection device structure on a second area of the N-type first semiconductor layer; and
a first electrode layer on the protection device structure,
wherein the light emitting structure comprises: an N-type second semiconductor layer on the first area of the N-type first semiconductor layer; an active layer on the N-type second semiconductor layer; and a P-type first semiconductor layer on the active layer,
wherein the protection device structure comprises: a P-type second semiconductor layer on the second area of the N-type first semiconductor layer; and an N-type third semiconductor layer on the P-type second semiconductor layer, and
wherein the N-type first semiconductor layer, the P-type second semiconductor layer, and the N-type third semiconductor layer form an N-P-N junction, and when a reverse ESD is applied to the first electrode, the reverse ESD flows and dissipates through the N-P-N junction.
2. The semiconductor light emitting device of claim 1 , wherein the N-type first semiconductor layer and the N-type second semiconductor layer satisfy a composition formula of In x Al y Ga 1-x-y N (0≦x≦1, 0≦y≦1, 0≦x+y≦1) as N-type semiconductor layers.
3. The semiconductor light emitting device of claim 1 , wherein the P-type second semiconductor layer comprises a single layer or superlattice structure selected from the group consisting of GaN, InN, AlN, InGaN, AlGaN, InAlGaN and AlInN as a P-type semiconductor layer.
4. The semiconductor light emitting device of claim 1 , wherein the N-type third semiconductor layer comprises a single layer or superlattice structure selected from the group consisting of GaN, InN, AlN, InGaN, AlGaN, InAlGaN and AlInN as an N-type semiconductor layer.
5. The semiconductor light emitting device of claim 1 , wherein the P-type second semiconductor layer is formed in a thickness range of 5 Å to 500 Å to form a tunnel junction with the N-type first semiconductor layer, and the N-type third semiconductor layer is formed in a thickness range of 10 Å to 3 μm.
6. The semiconductor light emitting device of claim 1 , comprising at least one of a second electrode layer, a transparent electrode layer and an N-type fourth semiconductor layer on the P-type first semiconductor layer.
7. The semiconductor light emitting device of claim 1 , comprising at least one of an undoped semiconductor layer, and a buffer layer under the N-type first semiconductor layer.
8. A semiconductor light emitting device, comprising:
a substrate;
an N-type first semiconductor layer on the substrate;
a light emitting structure on a first area of the N-type first semiconductor layer;
a P-N junction protection device structure on a second area of the N-type first semiconductor layer;
a first electrode layer on the P-N junction protection device structure; and
a second electrode layer on the light emitting structure,
wherein the light emitting structure comprises: an N-type second semiconductor layer on the first area of the N-type first semiconductor layer; an active layer on the N-type second semiconductor layer; and a P-type first semiconductor layer on the active layer,
wherein the P-N junction protection device structure comprises: a P-type second semiconductor layer tunnel functioned on the second area of the N-type first semiconductor layer; and an N-type third semiconductor layer between the first electrode layer and the P-type second semiconductor layer, and
wherein the N-type first semiconductor layer, the P-type second semiconductor layer, and the N-type third semiconductor layer form an N-P-N junction, and when a reverse ESD is applied to the first electrode, the reverse ESD flows and dissipates through the N-P-N junction.
9. The semiconductor light emitting device of claim 8 , wherein the P-N junction protection device structure is connected in inverse-parallel with the light emitting structure.
10. The semiconductor light emitting device of claim 8 , wherein the light emitting structure comprises an N-P-N junction structure.
11. The semiconductor light emitting device of claim 8 , wherein the P-type second semiconductor layer and the N-type third semiconductor layer are formed of at least one selected from the group consisting of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN in a superlattice structure.
12. The semiconductor light emitting device of claim 8 , comprising a transparent mask layer on the first area of the P-N junction protection device structure.
13. The semiconductor light emitting device of claim 8 , wherein the P-type second semiconductor layer is formed in a thickness range of 5 Å to 500 Å to form a tunnel junction with the N-type first semiconductor layer.
14. The semiconductor light emitting device of claim 8 , wherein the N-type third semiconductor layer is formed in a thickness range of 10 Å to 3 μm.
15. The semiconductor light emitting device of claim 8 , wherein the light emitting structure connected on the N-type first semiconductor layer separates from the P-N junction protection device structure connected on the N-type first semiconductor layer.
16. The semiconductor light emitting device of claim 8 , wherein the P-type second semiconductor layer and the N-type third semiconductor layer are formed in superlattice structure selected from the group consisting of GaN, InN, MN, InGaN, AlGaN, InAlGaN and AlInN.