Mass production method of semiconductor integrated circuit device and manufacturing method of electronic device
View Patent ↗In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).
1. A fabrication method of a semiconductor integrated circuit device, comprising the steps of:
(a) forming an insulating film over a device surface of a wafer;
(b) depositing a ruthenium-containing film over the wafer so as to substantially cover the insulating film;
(c) using a first cleaning liquid, which can dissolve ruthenium, to remove the ruthenium-containing film from over an outer edge portion of the device surface and an entire area of a back surface of the wafer, without removing a portion of the ruthenium-containing film over an inner region of the device surface;
(d) depositing a copper film over the wafer so as to substantially cover said portion of the ruthenium-containing film and the insulating film;
(e) using a second cleaning liquid, which can dissolve copper, to remove the copper film from over the outer edge portion of the device surface and the entire area of the back surface of the wafer, without removing a portion of the copper film over said portion of the ruthenium-containing film; and
(f) after step (e), subjecting the wafer to at least one of a lithography step, an inspection step and a thermal treating step, said at least one step being performed using equipment that is also used to process other wafers to which ruthenium has not been deposited.
2. A fabrication method of a semiconductor integrated circuit as defined in claim 1 , wherein the insulating film is a nitride-containing film.
3. A fabrication method of a semiconductor integrated circuit as defined in claim 1 , wherein the first cleaning liquid includes halogenated oxoacid.
4. A fabrication method of a semiconductor integrated circuit as defined in claim 3 , wherein the halogenated oxoacid is orthoperiodic acid.
5. A fabrication method of a semiconductor integrated circuit device, comprising the steps of:
(a) forming an insulating film over a device surface of a wafer;
(b) depositing a ruthenium-containing film over the wafer so as to substantially cover the insulating film;
(c) depositing a copper film over the wafer so as to substantially cover the ruthenium-containing film and the insulating film over the device surface;
(d) using cleaning liquid to remove the ruthenium containing film and the copper film from over an outer edge portion of the device surface and an entire area of a back surface of the wafer, without removing portions of the ruthenium containing film and the copper film from over an inner region of the device surface; and
(e) after the step (d), subjecting the wafer to at least one of a lithography step, an inspection step and a thermal treating step, said at least one step being performed using equipment that is also used to process other wafers to which ruthenium has not been deposited.
6. A fabrication method of a semiconductor integrated circuit as defined in claim 5 , wherein the step (d) includes using a first cleaning liquid which can dissolve ruthenium and a second cleaning liquid which can dissolve copper.
7. A fabrication method of a semiconductor integrated circuit as defined in claim 5 , wherein the insulating film is a nitride-containing film.
8. A fabrication method of a semiconductor integrated circuit as defined in claim 7 , wherein the step (d) includes using a cleaning liquid containing halogenated oxoacid.
9. A fabrication method of a semiconductor integrated circuit as defined in claim 8 , wherein the halogenated oxoacid is orthoperiodic acid.