Semiconductor device
View Patent ↗In a wafer level CSP package, with respect to signal wiring 9 b disposed in a signal wiring disposition forbidden region 16 in the vicinity of external output terminals disposed in a package outer peripheral portion, since a stress generated at signal wiring 9 can be dispersed by disposing dummy wiring 9 a around the signal wiring 9 b or by expanding the width of the signal wiring itself, occurrences of cracks in a surface protective film can be readily suppressed.
1. A semiconductor device comprising a substrate, and a wafer level chip scale package structure having external terminals, wherein
a signal wiring forbidden region on a plane parallel to a substrate principal plane, between a line connecting centroids of adjacent external terminals and an edge of the semiconductor device package, and
the semiconductor device comprises
signal wiring in the signal wiring forbidden region and
dummy wiring on a same wiring layer in a periphery of the signal wiring,
wherein the signal wiring forbidden region is a region in a range having a fan angle of 140 degrees from the centroid of the external terminal, a center line of the fan angle being perpendicular to the edge of the semiconductor device package and extending to the centroid on the plane parallel to the substrate principal plane, said region overlaps with a range enclosed by an arc whose center is the centroid of the external terminals and whose radius is 4/5 of a minimum distance to an edge of the external terminals and an arc whose center is the centroid of the external terminals and whose radius is 6/5 of a maximum distance to the edge of the external terminals.
2. The semiconductor device according to claim 1 , wherein the dummy wiring continuously encloses the periphery of the signal wiring with a gap of 2 μm or more between the dummy wiring and the signal wiring.
3. The semiconductor device according to claim 1 , wherein at least one piece of the dummy wiring is parallel to the signal wiring with a gap of at least a width of the signal wiring between the dummy wiring and the signal wiring.
4. The semiconductor device according to claim 1 , wherein at least one piece of the dummy wiring is parallel to the signal wiring with a gap of 2 μm or more between the dummy wiring and the signal wiring.
5. The semiconductor device according to claim 1 , wherein the plurality of pieces of wiring is made of a material including Al, and has a thickness of 1.5 μm or more.
6. A semiconductor device comprising a substrate, and a wafer level chip scale package structure having external terminals, wherein
a signal wiring forbidden region is on a plane parallel to a substrate principal plane between a line connecting centroids of adjacent external terminals and an edge of the semiconductor device package, and
the semiconductor device comprises
signal wiring in the signal wiring forbidden region and
dummy wiring on a same wiring layer in a periphery of the signal wiring, wherein
the external terminal is formed by a bump whose plane parallel to the substrate principal plane has a circular shape, and
the signal wiring forbidden region is a region between a line connecting a center of the plane parallel to the substrate principal plane of the adjacent bump and the edge of the semiconductor device package.
7. The semiconductor device according to claim 6 , wherein a post is provided at a layer underneath the bump.
8. The semiconductor device according to claim 6 , wherein an underbump metal film is provided at a layer underneath the bump.
9. A semiconductor device comprising a substrate, and a wafer level chip scale package structure having external terminals, wherein
a signal wiring forbidden region is on a plane parallel to a substrate principal plane between a line connecting centroids of adjacent external terminals and an edge of the semiconductor device package, and
the semiconductor device comprises
signal wiring in the signal wiring forbidden region and
dummy wiring on a same wiring layer in a periphery of the signal wiring, wherein
the external terminal is formed by a bump whose plane parallel to the substrate principal plane has a circular shape, and
the signal wiring forbidden region is a region in which a range having a fan angle of 140 degrees from a center of a planar circle of the external terminals, a center line of the fan angle being perpendicular to the edge of the semiconductor device package and extending to the center of the planar circle of the external terminals, said region overlaps with a range enclosed by an arc whose center is the center of the planar circle and whose radius is 4/5 of a radius of the external terminals and an arc whose center is the center of the planar circle and whose radius is 6/5 of the radius of the external terminals.
10. A semiconductor device comprising a substrate, and a wafer level chip scale package structure having external terminals, wherein
a signal wiring forbidden region is on a plane parallel to a substrate principal plane between a line connecting centroids of adjacent external terminals and an edge of the semiconductor device package, and
signal wiring in the signal wiring forbidden region is set to have a line width at least five times a thickness of the signal wiring.
11. The semiconductor device according to claim 10 , wherein
the signal wiring forbidden region is a region in which a range having a fan angle of 140 degrees from the centroid of the external terminals, a center line of the fan angle being perpendicular to the edge of the semiconductor device package and extending to the centroid on the plane parallel to the substrate principal plane, said region overlaps with a range enclosed by an arc whose center is the centroid of the external terminals and whose radius is 4/5 of a minimum distance to an edge of the external terminals and an arc whose center is the centroid of the external terminals and whose radius is 6/5 of a maximum distance to the edge of the external terminals.
12. The semiconductor device according to claim 10 , wherein
the external terminal is formed by a bump whose plane parallel to the substrate principal plane has a circular shape, and
the signal wiring forbidden region is a region between a line connecting a center of the plane parallel to the substrate principal plane of the adjacent bump and the edge of the semiconductor device package.
13. The semiconductor device according to claim 10 , wherein
the external terminal is formed by a bump whose plane parallel to the substrate principal plane has a circular shape, and
the signal wiring forbidden region is a region in which a range having a fan angle of 140 degrees from a center of a planar circle of the external terminals, a center line of the fan angle being perpendicular to the edge of the semiconductor device package and extending to the center of the planar circle of the external terminals, said region overlaps with a range enclosed by an arc whose center is the center of the planar circle and whose radius is 4/5 of a radius of the external terminals and an arc whose center is the center of the planar circle and whose radius is 6/5 of the radius of the external terminals.
14. The semiconductor device according to claim 12 , wherein a post is provided at a layer underneath the bump.
15. The semiconductor device according to claim 12 , wherein an underbump metal film is provided at a layer underneath the bump.
16. The semiconductor device according to claim 10 , wherein the signal wiring in the signal wiring forbidden region is set to have a line width of 10 μm or more.
17. A semiconductor device having external terminals, wherein
a signal wiring forbidden region is on a plane parallel to a substrate principal plane between a line connecting centroids of adjacent external terminals and an edge of the semiconductor device package, and
the semiconductor device comprises
signal wiring in the signal wiring forbidden region and
dummy wiring on a same wiring layer in a periphery of the signal wiring,
wherein the signal wiring and the dummy wiring are directly beneath the external terminals.
18. A semiconductor device having external terminals, wherein
a signal wiring forbidden region is on a plane parallel to a substrate principal plane between a line connecting centers of the adjacent external terminals of the outmost periphery and an edge of the semiconductor device package, and
the semiconductor device comprises
signal wiring in the signal wiring forbidden region and
dummy wiring on a same wiring layer in a periphery of the signal wiring.
19. The semiconductor device according to claim 17 , further comprising:
a semiconductor substrate, and
an interlayer insulating film on the semiconductor substrate, wherein the signal wiring and the dummy wiring are on the interlayer insulating film.
20. The semiconductor device according to claim 19 , wherein one of the external terminals comprises a post.
21. The semiconductor device according to claim 20 , wherein the post has a circular planar shape.
22. The semiconductor device according to claim 19 , wherein a spacing between the dummy wiring and the signal wiring is equal to or greater than 2 μm.
23. The semiconductor device according to claim 19 , wherein a spacing between the signal wiring and the dummy wiring is equal to or greater than a width of the dummy wiring.
24. The semiconductor device according to claim 19 , wherein at least one dummy wiring is parallel to the signal wiring.
25. The semiconductor device according to claim 19 , wherein the dummy wiring is covered with a protective film.
26. The semiconductor device according to claim 18 , further comprising:
a semiconductor substrate, and
an interlayer insulating film on the semiconductor substrate, wherein the signal wiring and the dummy wiring are on the interlayer insulating film.
27. The semiconductor device according to claim 26 , wherein one of the external terminal comprises a post.
28. The semiconductor device according to claim 27 , wherein the post has a circular planar shape.
29. The semiconductor device according to claim 26 , wherein a spacing between the dummy wiring and the signal wiring is equal to or greater than 2 μm.
30. The semiconductor device according to claim 26 , wherein a spacing between the signal wiring and the dummy wiring is equal to or greater than a width of the dummy wiring.
31. The semiconductor device according to claim 26 , wherein at least one dummy wiring is parallel to the signal wiring.
32. The semiconductor device according to claim 26 , wherein the dummy wiring is covered with a protective film.