METHODS FOR PROCESSING A SUBSTRATE HAVING A BACKSIDE LAYER
Methods for processing a substrate utilizing a backside layer are presented including: receiving a substrate, the substrate including a front side and a backside; forming the backside layer on the backside of the substrate; and performing at least one processing operation on the front side of the substrate, wherein the backside layer protects the backside of the substrate during the performing the at least one processing operation. In some embodiments, methods further include cross-linking the backside layer such that the backside layer is stabilized. In some embodiments, methods further include: functionalizing the backside layer, where the functionalizing alters a chemical characteristic of the backside layer, and where the functionalizing includes a functional group such as: a hydroxyl group, an amino group, a mercapto group, a fluorine group, a chlorine group, an alkene group, an aryle group, and a carboxy group.
1 . A method for processing a substrate utilizing a backside layer, the method comprising:
receiving a substrate, the substrate including a front side and a backside;
forming the backside layer on the backside of the substrate; and
performing at least one processing operation on the front side of the substrate, wherein the backside layer protects the backside of the substrate during the performing the at least one processing operation.
2 . The method of claim 1 , wherein the at least one processing operation is selected from the group consisting of: a fluorine-based solution buffered oxide etch (BOE), and an aqueous process.
3 . The method of claim 2 , wherein the aqueous process is selected from the group consisting of: a chemical mechanical planarization (CMP) cleaning process, a cleaning process, an electroplating process, an electroless (ELESS) deposition process, an electrochemical deposition process, a pre-CMP cleaning process, a post-CMP cleaning process, a via cleaning process, a contact cleaning process, a trench cleaning process, and a metallization process.
4 . The method of claim 1 , further comprising cross-linking the backside layer such that the backside layer is stabilized.
5 . The method of claim 4 , wherein
the cross-linking the backside layer includes a non-chemical modification selected from the group consisting of: deep ultraviolet (DUV) radiation, e-beam exposure, and atmospheric plasma, and wherein
the cross linking occurs over a cross-linking period of less than approximately 15 minutes at a cross-linking temperature of approximately less than 100° C.
6 . The method of claim 4 , wherein
the cross-linking the backside layer includes a chemical modification, wherein the chemical modification utilizes a cross-linking agent selected from the group consisting of: glutaraldehyde, dialdehydes, sulfuric acid (H 2 SO 4 ), maleic acid, citric acid, and ascorbic acid, and wherein
the cross-linking occurs over a cross-linking period in a range of approximately 30 to 600 seconds.
7 . The method of claim 5 , further comprising cross-linking across functional groups of a backbone of a molecule of the layer.
8 . The method of claim 1 , further comprising forming a front side monolayer on the front side of the substrate, wherein the front side monolayer protects the front side of the substrate during the performing the at least one processing operation.
9 . The method of claim 1 , further comprising functionalizing the backside layer, wherein the functionalizing alters a chemical characteristic of the backside layer, and wherein the functionalizing includes a functional group selected from the group consisting of: a hydroxyl group, an amino group, a mercapto group, a fluorine group, a chlorine group, an alkene group, an aryle group, and a carboxy group.
10 . The method of claim 9 , wherein the backside layer includes a molecule comprising a branched and functionalized backbone.
11 . The method of claim 1 , further comprising removing the backside layer.
12 . The method of claim 1 , wherein the backside layer includes a compound selected from the group consisting of: amines, alcohols, isolated silanols, vicinal silanols, and geminal silanols, wherein the silanols include compounds having the formula:
R—X—SiOH 3 , wherein
R is a hydrophobic group having a formula O(C 2 H 4 O) m CH 3 , wherein m=an integer greater than zero; and
X is an organic group having a formula (CH 2 ) n , wherein n=an integer greater than zero.
13 . The method of claim 1 , wherein the backside layer includes a compound having the formula C n —Si—DMA, wherein n is an integer selected from the group consisting of: 4, 8, 12, and 18.
14 . The method of claim 1 , wherein the backside layer comprises a hydrophobic self-assembled monolayer (SAM) to prevent adsorption of the contaminants.
15 . A substrate comprising:
a front side to be processed using a subsequent process;
a backside; and
a removable backside layer for protecting the backside and for preventing contamination of the backside during the subsequent process.
16 . The substrate of claim 15 , wherein the removable backside layer is cross-linked.
17 . The substrate of claim 15 , wherein the removable backside layer comprises a silanol having the formula:
R—X—SiOH 3 , wherein
R is a hydrophobic group having a formula O(C 2 H 4 O) m CH 3 , where m=an integer greater than zero; and
X is an organic group having a formula (CH 2 ) n , where n=an integer greater than zero.
18 . The substrate of claim 15 , wherein
the removable backside layer includes a compound having the formula:
C n —Si—DMA, wherein n is an integer selected from the group consisting of: 4, 8, 12, and 18, and wherein
the backside of the substrate is a composition selected from the group consisting of: TEOS (tetraethylorthosilicate) and SiO 2 .
19 . The substrate of claim 15 , wherein the removable backside layer comprises polyvinyl alcohol (PVA).
20 . The substrate of claim 15 , wherein the removable backside layer covers an edge and a bevel of the substrate.