IP Library Granted Patent US 8,163,339
Granted Patent B2
US 8,163,339 · App. 12/210,228 · Granted Apr 24, 2012

Edge densification for film boiling process

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Quick Facts
Patent No.
US 8,163,339
App. No.
12/210,228
Granted
Apr 24, 2012
Kind
B2
Abstract

A method and apparatus are disclosed for improving densification of porous substrate using a film boiling process. In particular, the disclosed method and apparatus permit more complete densification of a substrate (i.e., densification closer to the surface of the substrate) by providing a sort of barrier that reduces cooling of the surface of the substrate being densified caused by contact with the relatively cool boiling liquid precursor of the densifying material, such as carbon. In particular, contact between the substrate and the liquid precursor is reduced using one or both of physical barriers (such as a mesh material) or structures that promote the formation of an insulating gaseous layer between the substrate and the liquid precursor (such as a plate closely spaced apart from the surface of the porous substrate).

Claims (34)

1. A method of densifying a porous substrate comprising:

in a reaction chamber, submerging the porous substrate in a liquid precursor so that the liquid precursor infiltrates pores in the porous substrate;

inductively heating the submerged porous substrate using inductive power to a temperature sufficient to cause the liquid precursor to pyrolize and deposit a decomposition product within the pores of the substrate so as to densify the porous substrate, and

providing a barrier around the porous substrate, the barrier being constructed and arranged to permit some contact between the liquid precursor and the porous substrate,

wherein the barrier comprises a porous mesh material layer disposed on a part of the porous substrate, wherein the porous mesh material has an open porosity of between about 30% and about 60%,

wherein the porosity of the porous mesh material is such that infiltration of the liquid precursor into the pores of the porous substrate is not disrupted and a thermal profile at a beginning of densification is not affected when the inductive power used for densifying the substrate is lower than an inductive power that is required for heating the submerged substrate if the porous mesh material is not used.

2. The method according to claim 1 , wherein the porous mesh material is a polytetrafluroethylene (“PTFE”) mesh material.

3. The method according to claim 1 , comprising covering a peripheral edge of the porous substrate with an insulating material.

4. The method according to claim 3 , wherein the porous substrate is an annular member having a radially outward peripheral edge and a radially inward peripheral edge, and covering a peripheral edge of the porous substrate with an insulating material comprising covering the radially outward and radially inward peripheral edges of the annular member with an insulating material.

5. The method according to claim 1 , wherein the barrier comprises a wall member located adjacent to the porous substrate.

6. The method according to claim 5 , wherein the barrier comprises two substantially parallel wall members located on opposing sides of the porous substrate.

7. The method according to claim 6 , wherein a periphery of the two substantially parallel wall members is open to the liquid precursor.

8. The method according to claim 6 , wherein a periphery of the two substantially parallel wall members is closed off and at least one of the two substantially parallel wall members has openings formed therethrough.

9. The method according to claim 1 , wherein the liquid precursor comprises a hydrocarbon.

10. The method of claim 1 , wherein the decomposition product comprises carbon.

11. The method according to claim 9 , wherein the hydrocarbon is selected from the group consisting of cyclopentane, cyclohexane, 1-hexene, gasoline, toluene, methylcyclohexane, n-hexane, kerosene, hydrodesulfurized kerosene, benzene, and combinations thereof

12. The method according to claim 1 , wherein the liquid precursor contains an organosilane.

13. The method according to claim 12 , wherein the organosilane is selected from the group consisting of methyltrichlorosilane, dimethyldichlorosilane, methydichlorosilane, and tris-n-methyl amino silane.

14. The method according to claim 12 , wherein the decomposition product comprises silicon carbide and silicon nitride.

15. The method according to claim 1 , wherein the liquid precursor is a mixture of an organosilane and a hydrocarbon.

16. The method according to claim 14 , wherein the decomposition product is one of carbon/silicon carbide or carbon/silicon nitride.

17. The method according to claim 1 , wherein the porous substrate is partially densified by the step of inductively heating the submerged porous substrate, the method further comprising,

after partially densifying the porous substrate, lowering the level of the liquid precursor in the reaction chamber so as to leave the partially densified porous substrate outside of the liquid precursor,

heating the remaining liquid precursor to a temperature at which the remaining liquid precursor vaporizes, and

using the vaporized liquid precursor in a CVD densification process to finish densification of the partially densified porous substrate.

18. The method according to claim 1 , wherein the porous mesh material is configured and arranged to improve edges densification of the porous substrate without compromising densification of a core of the porous substrate.

19. The method according to claim 1 , wherein the power is equal to or lower than 120kW.

20. A method of densifying a porous substrate comprising:

in a reaction chamber, submerging the porous substrate in a liquid precursor so that the liquid precursor infiltrates pores in the porous substrate; and

partially densifying the submerged porous substrate by inductively heating the porous substrate, using inductive power, to a temperature sufficient to cause liquid precursor to pyrolize and deposit a decomposition product within the pores of the substrate,

arranging a barrier around the porous substrate to permit some contact between the liquid precursor and the porous substrate, the barrier comprises a porous mesh material layer disposed on a part of the porous substrate, wherein the porous mesh material has an open porosity of between about 30% and about 60%, the porosity of the porous mesh material is such that infiltration of the liquid precursor into the pores of the porous substrate is not disrupted and a thermal profile at a beginning of densification is not affected when the inductive power used for densifying the substrate is lower than an inductive power that is required for heating the submerged substrate if the porous mesh material is not used,

after partially densifying the porous substrate, lowering the level of the liquid precursor in the reaction chamber so as to leave the partially densified porous substrate outside of the liquid precursor,

heating the remaining liquid precursor to a temperature at which the remaining liquid precursor vaporizes, and

finishing the densification of the partially densified porous substrate by using the vaporized liquid precursor in a CVD densification process.

Assignments (3)
CHANGE OF NAME Recorded Dec 8, 2016
From: MESSIER-BUGATTI-DOWTY
To: SAFRAN LANDING SYSTEMS
Reel/Frame 040851/0908 →
MERGER Recorded Mar 9, 2012
From: MESSIER-BUGATTI; MESSIER DOWTY; MESSIER SERVICES
To: MESSIER-BUGATTI-DOWTY
Reel/Frame 027840/0153 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 20, 2009
From: FILLION, ARNAUD, MR.; SAFRAN HUMAN RESOURCES SUPPORT, INC.
To: MESSIER-BUGATTI
Reel/Frame 022424/0296 →